2SC5198

2010-11-02

1

TOSHIBA Transistor Silicon NPN Triple Diffused Type

2SC5198

Power Amplifier Applications

• Complementary to 2SA1941

• Suitable for use in 70-W high fidelity audio amplifier’s output stage

Characteristics

Symbol

Rating

Unit

Collector-base voltage

140

V

Collector-emitter voltage

140

V

Emitter-base voltage

5

V

Collector current

10

A

Base current

1

A

Collector power dissipation

100

W

Junction temperature

150

°C

Storage temperature range

−55 to 150

°C

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are

within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/"Derating Concept and Methods") and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Unit: mm

JEDEC

―

JEITA

―

TOSHIBA

2-16C1A

Weight: 4.7 g (typ.)