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2SC5198 数据表(PDF) 3 Page - Toshiba Semiconductor |
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2SC5198 数据表(HTML) 3 Page - Toshiba Semiconductor |
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3 / 4 page ![]() 2SC5198 2010-11-02 3 Collector current IC (A) VCE (sat) – IC Collector-emitter voltage VCE (V) IC – VCE IC – VBE Collector current IC (A) hFE – IC Base-emitter voltage VBE (V) Collector-emitter voltage VCE (V) Safe Operating Area 10 6 4 2 0 Common emitter VCE = 5 V 8 0.8 1.2 1.6 0.4 0 2.0 Tc = 100°C 25°C −25°C 100 10 0.1 1 1 Common emitter VCE = 5 V 0.01 1000 10 Tc = 100°C Tc = −25°C Tc = 25°C 200 10 6 4 2 0 IB = 10 mA 20 Common emitter Tc = 25°C 8 4 6 8 2 0 10 30 40 50 100 150 250 10 1 0.1 0.01 0.01 0.1 1 10 Common emitter IC/IB = 10 100 Tc = 100°C Tc = −25°C Tc = 25°C 0.05 2 30 1 10 30 100 300 0.5 3 5 10 *: Single nonrepetitive pulse Tc = 25°C Curves must be derated linearly with increase in temperature. IC max (continuous) IC max (pulsed)* VCEO max DC operation Tc = 25°C 1 ms* 10 ms* 100 ms* 0.3 0.1 3 |
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