+125

Symbol

Typ

Parameter

Conditions

Min

Max Unit

Forward voltage

V

0.45

Reverse current

Capacitance between terminals

f = 1 MHz, and 10 VDC reverse voltage

uA

pF

6

1

CDBER0140R

QW-A1089

O

O

Page 1

Typ

Average forward rectified current

Reverse voltage

Repetitive Peak reverse voltage

Forward current,surge peak

Symbol

Parameter

Conditions

Min

Max Unit

V

V

mA

100

40

45

Storage temperature

Junction temperature

+125

-40

8.3 ms single half sine-wave superimposed

on rate load (JEDEC method)

1

A

REV:C

0.053(1.35)

0.045(1.15)

0.034(0.85)

0.026(0.65)

0.030(0.75)

0.024(0.60)

Dimensions in inches and (millimeter)

0.022(0.55) Typ.

0.016(0.40) Typ.

Features

-Low reverse current.

-Designed for mounting on small surface.

-Extremely thin/leadless package.

-Majority carrier conduction.

Mechanical data

-Case: 0503/SOD-723F standard package,

molded plastic.

-Terminals: Gold plated, solderable per

MIL-STD-750,method 2026.

-Polarity: Indicated by cathode band.

-Mounting position: Any

-Weight: 0.002 gram(approx.).

Comchip Technology CO., LTD.

SMD Schottky Barrier Diode

RoHS Device

0503/SOD-723F

Company reserves the right to improve product design , functions and reliability without notice.