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2SC1815 数据表(PDF) 1 Page - Toshiba Semiconductor |
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2SC1815 数据表(HTML) 1 Page - Toshiba Semiconductor |
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1 / 4 page  2SC1815 2007-11-01 1 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC1815 Audio Frequency General Purpose Amplifier Applications Driver Stage Amplifier Applications High voltage and high current: VCEO = 50 V (min), IC = 150 mA (max) • Excellent hFE linearity: hFE (2) = 100 (typ.) at VCE = 6 V, IC = 150 mA : hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) • Low noise: NF = 1dB (typ.) at f = 1 kHz • Complementary to 2SA1015 (O, Y, GR class) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 60 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 5 V Collector current IC 150 mA Base current IB 50 mA Collector power dissipation PC 400 mW Junction temperature Tj 125 °C Storage temperature range Tstg −55~125 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = 60 V, IE = 0 ⎯ ⎯ 0.1 μA Emitter cut-off current IEBO VEB = 5 V, IC = 0 ⎯ ⎯ 0.1 μA hFE (1) (Note) VCE = 6 V, IC = 2 mA 70 ⎯ 700 DC current gain hFE (2) VCE = 6 V, IC = 150 mA 25 100 ⎯ Collector-emitter saturation voltage VCE (sat) IC = 100 mA, IB = 10 mA ⎯ 0.1 0.25 V Base-emitter saturation voltage VBE (sat) IC = 100 mA, IB = 10 mA ⎯ ⎯ 1.0 V Transition frequency fT VCE = 10 V, IC = 1 mA 80 ⎯ ⎯ MHz Collector output capacitance Cob VCB = 10 V, IE = 0, f = 1 MHz ⎯ 2.0 3.5 pF Base intrinsic resistance rbb’ VCE = 10 V, IE = −1 mA f = 30 MHz ⎯ 50 ⎯ Ω Noise figure NF VCE = 6 V, IC = 0.1 mA f = 1 kHz, RG = 10 kΩ ⎯ 1.0 10 dB Note: hFE classification O: 70~140, Y: 120~240, GR: 200~400, BL: 350~700 Unit: mm JEDEC TO-92 JEITA SC-43 TOSHIBA 2-5F1B Weight: 0.21 g (typ.) |
类似零件编号 - 2SC1815 |
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类似说明 - 2SC1815 |
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