Reverse Voltage: 20 to 40 Volts

Forward Current: 2.0 Amp

RoHS Device

Page 1

REV:B

Features

Mechanical data

-Case: Mini SMA/SOD-123H , molded plastic.

-Terminals: solderable per MIL-STD-750,

method 2026.

-Polarity: Indicated by cathode band.

-Approx. weight: 0.011 grams

CDBMT220L-G Thru. CDBMT240L-G

QW-BL012

Comchip Technology CO., LTD.

Dimensions in inches and (millimeter)

SOD-123H

0.146(3.7)

0.130(3.3)

0.018(0.45)

0.071(1.8)

0.055(1.4)

0.040(1.0)

0.024(0.6)

0.035(0.9)

0.006(0.15)

0.006(0.15)

0.028(0.7)

0.035(0.9)

0.028(0.7)

0.002(0.05)

-Low power loss, high efficiency.

-High current capability,low forward voltage drop.

-High surge capability.

-Guarding for overvoltage protection.

-Ultra high-speed switching.

-Excellent power dissipation offers better reverse

leakage current and thermal resistance.

-Low profile surface mounted application in order

to optimize board space.

-Silicon epitaxial planar chip,metal silicon junction.

-Lead-free part meets environmental standards of

MIL-STD-19500/228

Company reserves the right to improve product design , functions and reliability without notice.

Max. Repetitive Peak Reverse Voltage

Continuous Reverse Voltage

Max. RMS Voltage

Max. Forward Surge Current

8.3ms single half sine-wave superimposed

on rate load (JEDEC method)

Max. Forward Rectified Current (Fig.2)

Storage Temperature

Operating Temperature

CDBMT220L-G

Units

Symbol

Parameter

20

20

14

0.38

V

V

V

A

A

V

mA

pF

°C

°C

CDBMT240L-G

40

40

28

0.40

50

2.0

1.0

160

-65 to +175

-55 to +100

CDBMT230L-G

30

30

21

0.40

Typ. Diode Junction Capacitance

f=1MHz and applied 4V DC reverse voltage

°C/W

70

Typ. Thermal Resistance

Junction to Ambient