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CDBP0130L 数据表(PDF) 1 Page - Comchip Technology |
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CDBP0130L 数据表(HTML) 1 Page - Comchip Technology |
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1 / 4 page  CDBP0130L-G IO=100mA VR=30V RoHS Device SMD Schottky Barrier Diode QW-BA012 Page 1 REV:B Symbol Parameter Limits Unit DC reverse voltage 1 Features -Small surface mounting type. -High reliability. Mechanical Data -Case: Molded plastic SOD-723 -Terminals: Solderable per MIL-STD-750, Method 2026.1. -Polarity: Indicated by cathode band. -Mounting position: Any. Dimensions in inches and (millimeter) SOD-723 Peak forward surge current Junction temperature VR 100 30 125 V mA A OC Mean rectifying current IO IFSM TJ Storage temperature Tstg -40 to +125 OC Symbol Parameter Max. Unit Forward voltage VF 10 0.35 V μA Reverse current IR Conditions IF=10mA VR=10V Min. 0.043(1.100) 0.035(0.900) 0.008(0.200) REF. 0.059(1.500) 0.051(1.300 0.023(0.580) 0.020(0.515) 0.026(0.650) 0.021(0.525) Maximum Ratings (at Ta=25°C unless otherwise noted) Electrical Characteristics (at Ta=25°C unless otherwise noted) |
类似零件编号 - CDBP0130L |
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类似说明 - CDBP0130L |
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