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SOC2907A 数据表(PDF) 5 Page - STMicroelectronics

部件名 SOC2907A
功能描述  Hi-Rel 60 V, 0.6 A PNP transistor
PDF  21 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

SOC2907A 数据表(HTML) 5 Page - STMicroelectronics

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DocID15382 Rev 6
5/21
2N2907AHR
Electrical characteristics
21
2.2
ESCC electrical characteristics
C
obo
Output capacitance
(I
E
= 0)
V
CB
= 10 V
100 kHz
≤ f ≤ 1 MHz
-8
pF
C
ibo
Output capacitance
(I
E
= 0)
V
EB
= 2 V
100 kHz
≤ f ≤ 1 MHz
-30
pF
t
on
Turn-on time
V
CC
= 30 V, I
C
= 150 mA
I
B1
= 15 mA
-45
ns
t
off
Turn-off time
V
CC
= 30 V, I
C
= 150 mA
I
B1
= -I
B2
= 15 mA
-
300
ns
1.
Pulsed duration = 300 μs, duty cycle
≤ 2%
Table 4. JANS electrical characteristics (continued)
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Table 5. ESCC electrical characteristics
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
I
CBO
Collector cut-off
current (I
E
= 0)
V
CB
= 50 V,
V
CB
= 50 V, T
amb
= 150 °C
-
10
10
nA
μA
V
(BR)CBO
Collector-base
breakdown voltage
(I
E
= 0)
I
C
= 10 μA60
-
V
V
(BR)CEO
(1)
Collector-emitter
breakdown voltage
(I
B
= 0)
I
C
= 10 mA
60
-
V
V
(BR)EBO
Emitter-base
breakdown voltage
(I
C
= 0)
I
E
= 10 μA5
-
V
V
CE(sat)
(1)
Collector-emitter
saturation voltage
I
C
= 150 mA, I
B
= 15 mA
-
0.4
V
V
BE(sat)
(1)
Base-emitter
saturation voltage
I
C
= 150 mA, I
B
= 15 mA
0.87
1.3
V
h
FE
(1)
DC current gain
I
C
= 0.1 mA, V
CE
= 10 V
75
-
I
C
= 10 mA, V
CE
= 10 V
100
I
C
= 150 mA, V
CE
= 10 V
100
300
I
C
= 500 mA, V
CE
= 10 V
50
h
fe
Small signal current
gain
V
CE
= 20 V, I
C
= 20 mA
f = 100 MHz
2-
C
obo
Output capacitance
(I
E
= 0)
V
CB
= 10 V
100 kHz
≤ f ≤ 1 MHz
-8
pF



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