AD8212

Rev. B | Page 3 of 16

SPECIFICATIONS

Table 1.

Parameter

Conditions/Comments

Min

Typ

Max

Unit

SUPPLY VOLTAGE (V+)

No external pass transistor

7

65

V

With external PNP transistor1

7

>500

V

SUPPLY CURRENT2

V+ = 7 V to 65 V

220

720

μA

High voltage operation, using external PNP

200

1500

μA

VOLTAGE OFFSET

Offset Voltage (RTI)

±2

mV

Over Temperature (RTI)

±3

mV

Offset Drift

±10

μV/°C

INPUT

Input Impedance

Differential

2

kΩ

V+ = 7 V to 65 V

5

MΩ

Voltage Range

Differential

500

mV

100

200

nA

OUTPUT

Transconductance

1000

μA/V

7 V ≤ V+ ≤ 65 V, 0 mV to 500 mV differential input

500

μA

7 V ≤ V+ ≤ 65 V, with respect to 500 μA full scale

±1

%

Impedance

20

MΩ

Voltage Range

0

V+ − 5

V

REGULATOR

Nominal Value

7 V ≤ V+ ≤ 65 V

4.80

5

5.20

V

PSRR

7 V ≤ V+ ≤ 65 V

80

dB

185

200

μA

200

1000

μA

DYNAMIC RESPONSE

Small Signal −3 dB Bandwidth

Gain = 10

1000

kHz

Gain = 20

500

kHz

Gain = 50

100

kHz

Settling Time

Within 0.1% of the true output, gain = 20

2

μs

ALPHA PIN INPUT CURRENT

25

μA

NOISE

0.1 Hz to 10 Hz, RTI

1.1

μV p-p

Spectral Density, 1 kHz, RTI

40

nV/

√Hz

TEMPERATURE RANGE

−40

+125

°C

to the Hi

section.

gh Voltage Operation Using an External PNP Transistor

High Voltage Operation Using an External PNP Transistor

section

for more information.