TLP222A,TLP222A-2

2007-10-01

2

Characteristics

Symbol

Rating

Unit

Forward current

50

mA

−0.5

mA/°C

Peak forward current

1

A

Reverse voltage

5

V

LED

Junction temperature

125

°C

Off-state output terminal voltage

60

V

TLP222A

One

channel

operation

On-state

current

TLP222A-2

Two

channel

operations

500

mA

TLP222A

One

channel

operation

Forward

current

derating

TLP222A-2

Two

channel

operations

−5.0

mA/°C

Detector

Junction temperature

125

°C

Storage temperature

−55 to 125

°C

Operating temperature

−40 to 85

°C

Lead soldering temperature (10 s)

260

°C

(Note 1)

2500

Vrms

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Note 1: LED pins are shorted together. Detector pins are also shorted together.

Recommended Operating Conditions

Characteristics

Symbol

Min

Typ.

Max

Unit

Supply voltage

⎯

⎯

48

V

Forward current

5

7.5

25

mA

On-state current

⎯

⎯

500

mA

Operating temperature

−20

⎯

65

°C

Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the

device. Additionally, each item is an independent guideline respectively. In developing designs using this

product, please confirm specified characteristics shown in this document.

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Forward voltage

1.0

1.15

1.3

V

Reverse current

⎯

⎯

10

μA

LED

Capacitance

V

= 0, f = 1 MHz

⎯

30

⎯

pF

Off-state current

⎯

⎯

1

μA

Detector

Capacitance

V

= 0, f = 1 MHz

⎯

130

⎯

pF