IPLU300N04S4-R7 datasheet(2/9 Pages) INFINEON

部件名	IPLU300N04S4-R7

功能描述	OptiMOS-T2 Power-Transistor

PDF	9 Pages

Scroll/Zoom	100%

制造商	INFINEON [Infineon Technologies AG]

网页	http://www.infineon.com

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2 / 9 page

IPLU300N04S4-R7

Parameter

Symbol

Conditions

Unit

min.

typ.

max.

Thermal characteristics

Thermal resistance, junction - case

R thJC

0.35

K/W

SMD version, device on PCB

R thJA

minimal footprint

6 cm

2 cooling area3)

Electrical characteristics, at T j=25 °C, unless otherwise specified

Static characteristics

Drain-source breakdown voltage

V (BR)DSS

V GS=0 V,

I D=1 mA

Gate threshold voltage

V GS(th)

V DS=V GS, I D=230 µA

2.0

3.0

4.0

Zero gate voltage drain current

I DSS

V DS=40 V, V GS=0 V,

T j=25 °C

0.1

µA

V DS=18 V, V GS=0 V,

T j=85 °C

Gate-source leakage current

I GSS

V GS=20 V, V DS=0 V

100

Drain-source on-state resistance

RDS(on)

V GS=10 V, I D=100 A

0.53

0.76

mΩ

Values

Rev. 1.0

page 2

2013-11-12

IPLU300N04S4-R7 数据表(PDF) 2 Page - Infineon Technologies AG

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