MTP30P06V

2

Motorola TMOS Power MOSFET Transistor Device Data

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain–Source Breakdown Voltage

(VGS = 0 Vdc, ID = 0.25 mAdc)

Temperature Coefficient (Positive)

V(BR)DSS

60

—

—

62

—

—

Vdc

mV/

°C

Zero Gate Voltage Drain Current

(VDS = 60 Vdc, VGS = 0 Vdc)

(VDS = 60 Vdc, VGS = 0 Vdc, TJ = 150°C)

IDSS

—

—

—

—

10

100

µAdc

Gate–Body Leakage Current (VGS = ± 15 Vdc, VDS = 0 Vdc)

IGSS

—

—

100

nAdc

ON CHARACTERISTICS (1)

Gate Threshold Voltage

(VDS = VGS, ID = 250 µAdc)

Threshold Temperature Coefficient (Negative)

VGS(th)

2.0

—

2.6

5.3

4.0

—

Vdc

mV/

°C

Static Drain–Source On–Resistance (VGS = 10 Vdc, ID = 15 Adc)

RDS(on)

—

0.067

0.08

Ohm

Drain–Source On–Voltage

(VGS = 10 Vdc, ID = 30 Adc)

(VGS = 10 Vdc, ID = 15 Adc, TJ = 150°C)

VDS(on)

—

—

2.0

—

2.9

2.8

Vdc

Forward Transconductance

(VDS = 8.3 Vdc, ID = 15 Adc)

gFS

5.0

7.9

—

Mhos

DYNAMIC CHARACTERISTICS

Input Capacitance

(VDS = 25 Vdc, VGS = 0 Vdc,

f = 1.0 MHz)

Ciss

—

1562

2190

pF

Output Capacitance

(VDS = 25 Vdc, VGS = 0 Vdc,

f = 1.0 MHz)

Coss

—

524

730

Transfer Capacitance

f = 1.0 MHz)

Crss

—

154

310

SWITCHING CHARACTERISTICS (2)

Turn–On Delay Time

(VDD = 30 Vdc, ID = 30 Adc,

VGS = 10 Vdc,

RG = 9.1 Ω)

td(on)

—

14.7

30

ns

Rise Time

(VDD = 30 Vdc, ID = 30 Adc,

VGS = 10 Vdc,

RG = 9.1 Ω)

tr

—

25.9

50

Turn–Off Delay Time

VGS = 10 Vdc,

RG = 9.1 Ω)

td(off)

—

98

200

Fall Time

G = 9.1 Ω)

tf

—

52.4

100

Gate Charge

(See Figure 8)

(VDS = 48 Vdc, ID = 30 Adc,

VGS = 10 Vdc)

QT

—

54

80

nC

(See Figure 8)

(VDS = 48 Vdc, ID = 30 Adc,

VGS = 10 Vdc)

Q1

—

9.0

—

(VDS = 48 Vdc, ID = 30 Adc,

VGS = 10 Vdc)

Q2

—

26

—

Q3

—

20

—

SOURCE–DRAIN DIODE CHARACTERISTICS

Forward On–Voltage

(IS = 30 Adc, VGS = 0 Vdc)

(IS = 30 Adc, VGS = 0 Vdc, TJ = 150°C)

VSD

—

—

2.3

1.9

3.0

—

Vdc

Reverse Recovery Time

(IS = 30 Adc, VGS = 0 Vdc,

dIS/dt = 100 A/µs)

trr

—

175

—

ns

(IS = 30 Adc, VGS = 0 Vdc,

dIS/dt = 100 A/µs)

ta

—

107

—

(IS = 30 Adc, VGS = 0 Vdc,

dIS/dt = 100 A/µs)

tb

—

68

—

Reverse Recovery Stored Charge

QRR

—

0.965

—

µC

INTERNAL PACKAGE INDUCTANCE

Internal Drain Inductance

(Measured from contact screw on tab to center of die)

(Measured from the drain lead 0.25

″ from package to center of die)

LD

—

3.5

4.5

—

nH

Internal Source Inductance

(Measured from the source lead 0.25

″ from package to source bond pad)

LS

—

7.5

—

nH

(1) Pulse Test: Pulse Width

≤ 300 µs, Duty Cycle ≤ 2%.

(2) Switching characteristics are independent of operating junction temperature.