| 数据搜索系统,热门电子元器件搜索 |
|
L6599AD 数据表(PDF) 29 Page - STMicroelectronics |
|
|
|||||||||||||||||||||||||||||
L6599AD 数据表(HTML) 29 Page - STMicroelectronics |
|
29 / 35 page ![]() L6599A Application information Doc ID 15308 Rev 7 29/35 Equation 13 where Qg is the gate charge of the external Power MOSFET, R(DS)ON is the on-resistance of the bootstrap DMOS (150 W, typ.) and Tcharge is the ON-time of the bootstrap driver, which equals about half the switching period minus the deadtime TD. For example, using a MOSFET with a total gate charge of 30 nC, the drop on the bootstrap driver is about 3 V at a switching frequency of 200 kHz: Equation 14 If a significant drop on the bootstrap driver is an issue, an external ultra-fast diode can be used, therefore saving the drop on the R(DS)ON of the internal DMOS. F on ) DS ( e arg ch g F on ) DS ( e arg ch Drop V R T Q V R I V + = + = V 7 . 2 6 . 0 150 10 27 . 0 10 5 . 2 10 30 V 6 6 9 Drop = + ⋅ − ⋅ ⋅ = − − − |
|
链接网址 |
| ALLDATASHEET是否为您带来帮助? [ DONATE ] |
关于 Alldatasheet | 广告服务 | 联系我们 | 隐私政策 | 数据表链接 | 链接交换 | 制造商名单 All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |