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STPS2200 数据表(PDF) 2 Page - STMicroelectronics

部件名 STPS2200
功能描述  Power Schottky diode
PDF  9 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STPS2200 数据表(HTML) 2 Page - STMicroelectronics

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Characteristics
STPS2200
2/9
DocID024381 Rev 1
1
Characteristics
To evaluate the maximum conduction losses use the following equation:
P = 0.58 x IF(AV) + 0.03 IF
2
(RMS)
Note:
More information is available in the application notes:
AN604 Calculation of conduction losses in a power rectifier
AN4021 Calculation of reverse losses in a power diode
Table 2. Absolute ratings (limiting values, at 25 °C unless otherwise stated)
Symbol
Parameter
Value
Unit
VRRM
Repetitive peak reverse voltage
200
V
IF(RMS)
Forward rms current
10
A
IF(AV)
Average forward current
 = 0.5, square wave
SMB
Tl = 145 °C
2A
SMBflat
Tl = 150 °C
IFSM
Surge non repetitive forward current
tp = 10 ms sinusoidal, Tl = 25 °C
100
A
Tstg
Storage temperature range
-65 to +175
°C
Tj
Operating junction temperature range
-40 to +175
°C
Table 3. Thermal parameters
Symbol
Parameter
Value
Unit
Rth(j-l)
Junction to lead
SMB
20
°C/W
SMBflat
15
Table 4. Static electrical characteristics
Symbol
Test conditions
Min.
Typ.
Max.
Unit
IR
(1)
Reverse leakage current
Tj = 25 °C
VR = VRRM
5µA
Tj = 125 °C
0.7
2.5
mA
VF
(1)
Forward voltage drop
Tj = 25 °C
IF = 2 A
0.73
0.80
V
Tj = 125 °C
0.58
0.64
V
1. Pulse test: tp = 380 µs,  < 2%



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