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MP2493DN 数据表(PDF) 2 Page - Monolithic Power Systems

部件名 MP2493DN
功能描述  2A, 36V, Low EMI Step-Down Converter with Programmable Output Current Limit
PDF  12 Pages
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制造商  MPS [Monolithic Power Systems]
网页  http://www.monolithicpower.com
标志 MPS - Monolithic Power Systems

MP2493DN 数据表(HTML) 2 Page - Monolithic Power Systems

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MP2493 – 2A, 36V, LOW EMI STEP-DOWN WITH PROGRAMMABLE OUTPUT CURRENT LIMIT
MP2493 Rev. 0.9
www.MonolithicPower.com
2
4/23/2010
MPS Proprietary Information. Unauthorized Photocopy and Duplication Prohibited.
© 2010 MPS. All Rights Reserved.
ORDERING INFORMATION
Part Number
Package
Top Marking
Free Air Temperature (TA)
MP2493DS*
SOIC8
MP2493DS
–40
°C to +85°C
MP2493DN**
SOIC8E
MP2493DN
–40
°C to +85°C
* For Tape & Reel, add suffix –Z (e.g. MP2493DS–Z);
For RoHS, compliant packaging, add suffix –LF(e.g. MP2493DS–LF–Z)
** For Tape & Reel, add suffix –Z (e.g. MP2493DN–Z);
For RoHS, compliant packaging, add suffix –LF(e.g. MP2493DN–LF–Z)
PACKAGE REFERENCE
VIN
GND
FB
SS
SW
BST
ISP
ISN
1
2
3
4
8
7
6
5
TOP VIEW
VIN
GND
FB
SS
SW
BST
ISP
ISN
1
2
3
4
8
7
6
5
TOP VIEW
EXPOSED PAD
ON BACKSIDE
CONNECT TO GND
SOIC8
SOIC8E
ABSOLUTE MAXIMUM RATINGS (1)
Supply Voltage VIN ....................................... 40V
VSW....................................... –0.3V to VIN + 0.3V
VBST ................................................... VSW + 6.5V
VISN, vISP................................................0V to15V
All Other Pins..............................–0.3V to +6.5V
Continuous Power Dissipation
(TA = +25°C)
(2)
SOIC8………………………………………...1.4W
SOIC8E……………………………………....2.5W
Junction Temperature...............................150
°C
Lead Temperature ....................................260
°C
Storage Temperature.............. –65
°C to +150°C
Recommended Operating Conditions
(3)
Supply Voltage VIN ...........................4.5V to 36V
Output Voltage VOUT (VIN>16.5V) .....0.8V to 15V
Output Voltage VOUT (VIN<=16.5V) ......................
........................................0.8V to (VIN–1.5) V
Operating Junction Temperature (TJ)
................................................ –40
°C to +125°C
Thermal Resistance
(4)
θJA
θJC
SOIC8 .....................................90 ...... 45 ...
°C/W
SOIC8E...................................50 ...... 10 ...
°C/W
Notes:
1) Exceeding these ratings may damage the device.
2) The maximum allowable power dissipation is a function of the
maximum junction temperature TJ(MAX), the junction-to-
ambient thermal resistance θJA, and the ambient temperature
TA. The maximum allowable continuous power dissipation at
any ambient temperature is calculated by PD(MAX)=(TJ(MAX)-
TA)/ θJA. Exceeding the maximum allowable power dissipation
will cause excessive die temperature, and the regulator will go
into thermal shutdown. Internal thermal shutdown circuitry
protects the device from permanent damage.
3) The device is not guaranteed to function outside of its
operating conditions.
4) Measured on JESD51-7, 4-layer PCB.



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