DocID024138 Rev 5

7/21

STGIPS20C60

Electrical characteristics

3

Electrical characteristics

T

J

= 25 °C unless otherwise specified.

Note:

the switching time of IGBT itself under the internally given gate driving condition.

Table 7. Inverter part

Symbol

Parameter

Test conditions

Value

Unit

Min.

Typ.

Max.

V

CE(sat)

Collector-emitter

saturation voltage

V

CC

= V

boot

= 15 V, V

IN

(1)

= 0 ÷ 5 V,

I

C

= 20 A

-1.6

V

V

CC

= V

boot

= 15 V, V

IN

(1)

= 0 ÷ 5 V,

I

C

= 20 A, T

J

= 125 °C

-1.7

I

CES

Collector-cut off current

(V

IN

(1)

= 0 “logic state”)

V

CE

= 550 V, V

CC

= V

Boot

= 15 V

-

100

μA

V

F

Diode forward voltage

V

IN

(1)

= 0 “logic state”, I

C

= 20 A

-

1.9

2.2

V

Inductive load switching time and energy

t

on

Turn-on time

V

PN

= 300 V,

V

CC

= V

boot

= 15 V,

V

IN

(1)

= 0 ÷ 5 V,

I

C

= 20 A

(see

Figure 5)

-390

-

ns

t

c(on)

Crossover time (on)

-

170

-

t

off

Turn-off time

-

970

-

t

c(off)

Crossover time (off)

-

150

-

t

rr

Reverse recovery time

-

284

-

E

on

Turn-on switching losses

-

520

-

μJ

E

off

Turn-off switching losses

-

460

-

1.

Applied between HIN

i

, LIN

i and

G

ND

for i = U, V, W. (LIN inputs are active-low).