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20N65M5 数据表(PDF) 7 Page - STMicroelectronics

部件名 20N65M5
功能描述  N-channel 650 V, 0.160 typ., 18 A MDmesh V Power MOSFET in D2PAK, I2PAK
PDF  21 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

20N65M5 数据表(HTML) 7 Page - STMicroelectronics

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STB20N65M5, STI20N65M5, STP20N65M5, STW20N65M5
Electrical characteristics
Doc ID 022865 Rev 2
7/21
Figure 8.
Gate charge vs gate-source voltage Figure 9.
Static drain-source on-resistance
Figure 10.
Capacitance variations
Figure 11.
Output capacitance stored energy
Figure 12.
Normalized gate threshold voltage
vs temperature
Figure 13.
Normalized on-resistance vs
temperature
VGS
6
4
2
0
0
10
Qg(nC)
(V)
40
8
20
30
10
VDD=520V
ID=9A
300
200
100
0
400
500
VDS
(V)
VDS
12
AM15589v1
RDS(on)
0.155
0.145
0.135
0.125
0
10
ID(A)
(
Ω)
5
15
0.165
0.175
VGS=10V
0.185
0.195
AM15590v1
C
1000
100
10
1
0.1
10
VDS(V)
(pF)
1
10000
100
Ciss
Coss
Crss
AM15591v1
Eoss
2
1
0
0
100
VDS(V)
(µJ)
400
3
200 300
4
5
500
600
6
7
AM15592v1
VGS(th)
1.00
0.90
0.80
0.70
-50
0
TJ(°C)
(norm)
-25
1.10
75
25
50
100
ID = 250 µA
VDS = VGS
AM05459v1
RDS(on)
1.7
1.3
0.9
0.5
-50
0
TJ(°C)
(norm)
-25
75
25
50
100
0.7
1.1
1.5
1.9
2.1
VGS= 10V
ID= 9 A
AM05460v1



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