COPPERWIRE datasheet(2/15 Pages) FREESCALE

2 / 15 page

RF Device Data

Freescale Semiconductor

MRF6V4300NR1 MRF6V4300NBR1

Table 2. Thermal Characteristics

Characteristic

Symbol

Value (1,2)

Unit

Thermal Resistance, Junction to Case

Case Temperature 83°C, 300 W CW

RθJC

0.24

°C/W

Table 3. ESD Protection Characteristics

Test Methodology

Class

Human Body Model (per JESD22--A114)

1C (Minimum)

Machine Model (per EIA/JESD22--A115)

A (Minimum)

Charge Device Model (per JESD22--C101)

IV (Minimum)

Table 4. Moisture Sensitivity Level

Test Methodology

Rating

Package Peak Temperature

Unit

Per JESD22--A113, IPC/JEDEC J--STD--020

260

°C

Table 5. Electrical Characteristics (TA =25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

Off Characteristics

Gate--Source Leakage Current

(VGS =5 Vdc, VDS =0 Vdc)

IGSS

—

μAdc

Drain--Source Breakdown Voltage

(ID = 150 mA, VGS =0 Vdc)

V(BR)DSS

110

—

Vdc

Zero Gate Voltage Drain Leakage Current

(VDS =50 Vdc, VGS =0 Vdc)

IDSS

—

μAdc

Zero Gate Voltage Drain Leakage Current

(VDS = 100 Vdc, VGS =0 Vdc)

IDSS

—

2.5

On Characteristics

Gate Threshold Voltage

(VDS =10 Vdc, ID = 800 μAdc)

VGS(th)

0.9

1.65

2.4

Vdc

Gate Quiescent Voltage

(VDD =50 Vdc, ID = 900 mAdc, Measured in Functional Test)

VGS(Q)

1.9

2.7

3.4

Vdc

Drain--Source On--Voltage

(VGS =10 Vdc, ID =2 Adc)

VDS(on)

—

0.25

—

Vdc

Dynamic Characteristics

Reverse Transfer Capacitance

(VDS =50 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS =0 Vdc)

Crss

—

2.8

—

Output Capacitance

(VDS =50 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS =0 Vdc)

Coss

—

105

—

Input Capacitance

(VDS =50 Vdc, VGS =0 Vdc ± 30 mV(rms)ac @ 1 MHz)

Ciss

—

304

—

Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD =50 Vdc, IDQ = 900 mA, Pout = 300 W, f = 450 MHz, CW

Power Gain

Gps

Drain Efficiency

ηD

—

Input Return Loss

IRL

—

--16

--9

1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF

calculators by product.

2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.

Select Documentation/Application Notes -- AN1955.

ATTENTION: The MRF6V4300N and MRF6V4300NB are high power devices and special considerations

must be followed in board design and mounting. Incorrect mounting can lead to internal temperatures which

exceed the maximum allowable operating junction temperature. Refer to Freescale Application Note AN3263

(for bolt down mounting) or AN1907 (for solder reflow mounting) PRIOR TO STARTING SYSTEM DESIGN to

ensure proper mounting of these devices.

CopperWire 数据表(PDF) 2 Page - Freescale Semiconductor, Inc

CopperWire 数据表(HTML) 2 Page - Freescale Semiconductor, Inc

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15

数据表下载

链接网址

CopperWire 数据表(PDF) 2 Page - Freescale Semiconductor, Inc

CopperWire 数据表(HTML) 2 Page - Freescale Semiconductor, Inc

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15

数据表 下载

链接网址

数据表下载