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MP3352DQ 数据表(PDF) 2 Page - Monolithic Power Systems

部件名 MP3352DQ
功能描述  60V, 2.5A Integrated Photo Flash Charger with IGBT Driver and Quench
PDF  9 Pages
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制造商  MPS [Monolithic Power Systems]
网页  http://www.monolithicpower.com
标志 MPS - Monolithic Power Systems

MP3352DQ 数据表(HTML) 2 Page - Monolithic Power Systems

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MP3352 – 60V, 2.5A INTEGRATED PHOTO FLASH CHARGER WITH IGBT DRIVER AND QUENCH
MP3352 Rev. 0.9
www.MonolithicPower.com
2
11/12/2008
MPS Proprietary Information. Unauthorized Photocopy and Duplication Prohibited.
© 2008 MPS. All Rights Reserved.
PACKAGE REFERENCE
1
2
3
4
13
14
15
16
8
7
6
5
12
11
10
9
Part Number*
Package
Temperature
MP3352DQ
QFN16-3
–40
°C to +85°C
* For Tape & Reel, add suffix –Z (e.g. MP3352DQ–Z)
For RoHS compliant packaging, add suffix –LF (e.g.
MP3352DQ–LF–Z)
ABSOLUTE MAXIMUM RATINGS
(1)
VIN to GND ........................................-0.3V to 6V
CHARGE, ISET, IGBTIN, RDYB, QREF, QSNS
to GND..............................................-0.3V to 6V
FB to GND ........................................-0.3V to 6V
SW to GND.....................................-0.3V to 60V
Maximum Operating Frequency .............400kHz
Operating Temperature Ranges:-40°C to +85°C
Storage Temperature ...............-55°C to +150°C
Junction Temperature.............................+150°C
Lead Temperature (Solder) ....................+260°C
Thermal Resistance
(2)
θJA
θJC
QFN16 (3mmx3mm)............... 50 ...... 12...
°C/W
Notes:
1) Exceeding these ratings may damage the device.
2) Measured on approximately 1” square of 1 oz copper.
ELECTRICAL CHARACTERISTICS
(VIN=V (CHARGE)=3.3V, TA = +25°C, unless otherwise noted.)
Parameter
Conditions
Min
Typ
Max
Unit
Photoflash Capacitor Charger
VIN Voltage Range
3
6
V
VIN UVLO
Rising edge, hysteresis = 200mV
2.7
2.8
2.9
V
VIN Quiescent Current
V(CHARGE)=High, V(SW) = 0,
free run by TONMAX
1
2
mA
VIN Quiescent Current
Charge Complete,
V(CHARGE)=High, V(FB) = 1.3V
50
µA
Shutdown Current from VIN
V(CHARGE)=Low
1
µA
VSW Leakage Current
VIN=3.3V,VSW=60V, in Shutdown
2
µA
SW ON resistance between
SW and GND
Switch turn-on
0.2
Charge Input High Voltage
2.4
V
Charge Input Low Voltage
0.6
V
Pull-down
resistance
of
CHARGE pin
V(CHARGE)=3.3V
100K
IPEAK1
RSET=33.2kΩ
1.36
1.51
1.66
A
IPEAK2
RSET=100kΩ
0.4
0.5
0.6
A
Charge completion detect
voltage at FB
1.176
1.20
1.224
V
FB input bias current I(FB)
-0.2
0.2
µA
DCM Comparator threshold
With 1.2KΩ (1%) connected to FB
15
25
35
mV



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