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MP3356DG 数据表(PDF) 3 Page - Monolithic Power Systems

部件名 MP3356DG
功能描述  High Voltage Photo Flash Charger and IGBT Driver for DSC
PDF  10 Pages
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制造商  MPS [Monolithic Power Systems]
网页  http://www.monolithicpower.com
标志 MPS - Monolithic Power Systems

MP3356DG 数据表(HTML) 3 Page - Monolithic Power Systems

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MP3356 – HIGH VOLTAGE PHOTO FLASH CHARGER AND IGBT DRIVER FOR DSC
MP3356 Rev. 0.91
www.MonolithicPower.com
3
1/29/2010
MPS Proprietary Information. Unauthorized Photocopy and Duplication Prohibited.
© 2010 MPS. All Rights Reserved.
ELECTRICAL CHARACTERISTICS
VIN = VEN = 3.6V, TA = +25°C, unless otherwise noted.
Parameter
Conditions
Min
Typ
Max
Unit
Photoflash Capacitor Charger
VIN Voltage Range
2.8
6
V
VIN UVLO
Rising edge, hysteresis =
200mV
typical
2.5
V
VIN Quiescent Current
V(EN)=High, V(FB) = 0
1
2
mA
VIN Quiescent Current
V(EN)=High, V(FB) = 336V
100
µA
Shutdown Current from VIN
V(EN)=Low, VIN =3.6V
1
µA
VSW Leakage Current
VIN=3.6V, VSW=50V, in Shutdown
1
µA
SW ON Resistance between SW
and PGND
Switch turn-on, ISW=100mA ,VIN=3.6V
0.5
EN Input High Voltage
2.4
V
EN Input Low Voltage
0.6
V
Pull-down Resistance of EN pin
V(EN)=3.6V
100
k
IPEAK
Peak Current Limit
1.2
1.5
1.7
A
Charge completion detect voltage
at FB
294
302
310
V
FB Resistance
V(FB)=30V
315
k
DCM Comparator threshold
5
V
PG Leakage Current
V(PG)=3.6V
1
µA
PG Output Low Voltage
ISINK= 2mA
0.1
V
MAX TON
Maximum TON time
70
µS
Thermal Shutdown
Rising edge, hysteresis = 15
oC
150
oC
IGBT Driver
IGBTOUT pull-up ON resistance
6
IGBTOUT
pull-down
ON
resistance
6
IGBTIN Input High Voltage
2.4
V
IGBTIN Input Low Voltage
0.6
V
Propagation delay
IGBTIN
rising/falling
edge
to
IGBTOUT
rising/falling
edge,
Cgate=6800pF
40
nS
IGBTOUT rise time
Cgate=6800pF
130
nS
IGBTOUT fall time
Cgate=6800pF
180
nS
Pull down resistance of IGBTIN
90
k



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