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MP3356DG 数据表(PDF) 3 Page - Monolithic Power Systems |
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MP3356DG 数据表(HTML) 3 Page - Monolithic Power Systems |
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3 / 10 page ![]() MP3356 – HIGH VOLTAGE PHOTO FLASH CHARGER AND IGBT DRIVER FOR DSC MP3356 Rev. 0.91 www.MonolithicPower.com 3 1/29/2010 MPS Proprietary Information. Unauthorized Photocopy and Duplication Prohibited. © 2010 MPS. All Rights Reserved. ELECTRICAL CHARACTERISTICS VIN = VEN = 3.6V, TA = +25°C, unless otherwise noted. Parameter Conditions Min Typ Max Unit Photoflash Capacitor Charger VIN Voltage Range 2.8 6 V VIN UVLO Rising edge, hysteresis = 200mV typical 2.5 V VIN Quiescent Current V(EN)=High, V(FB) = 0 1 2 mA VIN Quiescent Current V(EN)=High, V(FB) = 336V 100 µA Shutdown Current from VIN V(EN)=Low, VIN =3.6V 1 µA VSW Leakage Current VIN=3.6V, VSW=50V, in Shutdown 1 µA SW ON Resistance between SW and PGND Switch turn-on, ISW=100mA ,VIN=3.6V 0.5 Ω EN Input High Voltage 2.4 V EN Input Low Voltage 0.6 V Pull-down Resistance of EN pin V(EN)=3.6V 100 k Ω IPEAK Peak Current Limit 1.2 1.5 1.7 A Charge completion detect voltage at FB 294 302 310 V FB Resistance V(FB)=30V 315 k Ω DCM Comparator threshold 5 V PG Leakage Current V(PG)=3.6V 1 µA PG Output Low Voltage ISINK= 2mA 0.1 V MAX TON Maximum TON time 70 µS Thermal Shutdown Rising edge, hysteresis = 15 oC 150 oC IGBT Driver IGBTOUT pull-up ON resistance 6 Ω IGBTOUT pull-down ON resistance 6 Ω IGBTIN Input High Voltage 2.4 V IGBTIN Input Low Voltage 0.6 V Propagation delay IGBTIN rising/falling edge to IGBTOUT rising/falling edge, Cgate=6800pF 40 nS IGBTOUT rise time Cgate=6800pF 130 nS IGBTOUT fall time Cgate=6800pF 180 nS Pull down resistance of IGBTIN 90 k Ω |
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