RSQ035N03

Transistors

2/2

Electrical characteristics (Ta=25

°C)

Parameter

Symbol

Min.

−

Typ.

Max.

Unit

Conditions

∗

∗

∗

∗

∗

∗

∗

∗

∗

Gate-source leakage

Drain-source breakdown voltage

Zero gate voltage drain current

Gate threshold voltage

Static drain-source on-state

resistance

Forward transfer admittance

Input capacitance

Output capacitance

Reverse transfer capacitance

Turn-on delay time

Rise time

Turn-off delay time

Fall time

Total gate charge

∗Pulsed

−

10

15V

30

−−

−−

1

1.0

−

2.5

V

−

44

62

−

60

84

m

Ω

m

Ω

m

Ω

−

67

94

2.0

−−

−

290

−

pF

−

85

55

−

pF

−

7

−

pF

f=1MHz

−

9

−

ns

−

24

−

ns

−

6

−

ns

−

5.3

−

ns

−

1.0

7.4

nC

−

1.4

−

nC

−−

nC

15

V

Ω

Ω

Body diode characteristics (Source-drain) (Ta=25

°C)

−−

1.2

V

Forward voltage

Parameter

Symbol

Min.

Typ.

Max.

Unit

Conditions