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APT5010B2LL 数据表(PDF) 4 Page - Microsemi Corporation

部件名 APT5010B2LL
功能描述  Power MOS 7 is a new generation of low loss, high voltage, N-Channel
PDF  5 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
制造商  MICROSEMI [Microsemi Corporation]
网页  http://www.microsemi.com
标志 MICROSEMI - Microsemi Corporation

APT5010B2LL 数据表(HTML) 4 Page - Microsemi Corporation

  APT5010B2LL Datasheet HTML 1Page - Microsemi Corporation APT5010B2LL Datasheet HTML 2Page - Microsemi Corporation APT5010B2LL Datasheet HTML 3Page - Microsemi Corporation APT5010B2LL Datasheet HTML 4Page - Microsemi Corporation APT5010B2LL Datasheet HTML 5Page - Microsemi Corporation  
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background image
APT5010B2LL_LLL
(G)
184
100
10
1
16
12
8
4
0
20,000
10,000
1,000
100
10
200
100
10
1
1
10
100
500
0
10
20
30
40
50
0
20
40
60
80
100
120
140
0.3
0.5
0.7
0.9
1.1
1.3
1.5
TC=+25°C
TJ=+150°C
SINGLE PULSE
OPERATIONHERE
LIMITEDBYRDS(ON)
Crss
Ciss
Coss
VDS=250V
VDS=100V
VDS=400V
I
D = 46A
10mS
1mS
100µS
TJ=+150°C
TJ=+25°C
V
DD = 330V
R
G = 5Ω
T
J = 125°C
L = 100µH
I
D (A)
I
D (A)
FIGURE 14, DELAY TIMES vs CURRENT
FIGURE 15, RISE AND FALL TIMES vs CURRENT
ID (A)
R
G, GATE RESISTANCE (Ohms)
FIGURE 16, SWITCHING ENERGY vs CURRENT
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
td(on)
td(off)
Eon
Eoff
Eon
Eoff
tr
tf
V
DD = 330V
R
G = 5Ω
T
J = 125°C
L = 100µH
10
20
30
40
50
60
70
10
20
30
40
50
60
70
10
20
30
40
50
60
70
0
5
10 15 20 25 30
35 40 45 50
80
70
60
50
40
30
20
10
0
1500
1200
900
600
300
0
V
DD = 330V
R
G = 5Ω
T
J = 125°C
L = 100µH
E
ON includes
diode reverse recovery.
V
DD = 330V
I
D = 46A
T
J = 125°C
L = 100µH
E
ON includes
diode reverse recovery.
100
90
80
70
60
50
40
30
20
10
0
2500
2000
1500
1000
500
0
V
DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
V
DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE10,MAXIMUMSAFEOPERATINGAREA
FIGURE11, CAPACITANCEvsDRAIN-TO-SOURCEVOLTAGE
Qg,TOTALGATECHARGE(nC)
V
SD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE12,GATECHARGESvsGATE-TO-SOURCEVOLTAGE
FIGURE13, SOURCE-DRAINDIODEFORWARDVOLTAGE



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