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APT10035LFLL 数据表(PDF) 4 Page - Microsemi Corporation

部件名 APT10035LFLL
功能描述  Power MOS 7is a new generation of low loss, high voltage, N-Channel
PDF  5 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
制造商  MICROSEMI [Microsemi Corporation]
网页  http://www.microsemi.com
标志 MICROSEMI - Microsemi Corporation

APT10035LFLL 数据表(HTML) 4 Page - Microsemi Corporation

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APT10035B2FLL - LFLL
20,000
10,000
1,000
100
200
100
10
1
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
Qg, TOTAL GATE CHARGE (nC)
V
SD
, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
1
10
100
1000
0
10
20
30
40
50
0
50
100
150
200
250
0.3
0.5
0.7
0.9
1.1
1.3
1.5
112
50
10
1
16
12
8
4
0
TC=+25°C
TJ =+150°C
SINGLE PULSE
OPERATIONHERE
LIMITEDBYRDS(ON)
10mS
1mS
100µS
VDS=500V
VDS=200V
VDS=800V
I
D
= 28A
I
D
(A)
I
D
(A)
FIGURE 14, DELAY TIMES vs CURRENT
FIGURE 15, RISE AND FALL TIMES vs CURRENT
ID (A)
R
G
, GATE RESISTANCE (Ohms)
FIGURE 16, SWITCHING ENERGY vs CURRENT
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
V
DD
= 670V
R
G
= 5
Ω
T
J
= 125°C
L = 100µH
td(on)
td(off)
Eon
Eoff
Eon
Eoff
tr
tf
0
10
20
30
40
50
0
10
20
30
40
50
0
10
20
30
40
50
0
5
1015
20
2530
35 40
45
50
180
160
140
120
100
80
60
40
20
0
2500
2000
1500
1000
500
0
80
60
40
20
0
5000
4000
3000
2000
1000
0
V
DD
= 670V
R
G
= 5
Ω
T
J
= 125°C
L = 100µH
V
DD
= 670V
R
G
= 5
Ω
T
J
= 125°C
L = 100µH
E
ON
includes
diode reverse recovery.
V
DD
= 670V
I
D
= 28A
T
J
= 125°C
L = 100µH
E
ON
includes
diode reverse recovery.
Crss
Ciss
Coss
TJ =+150°C
TJ =+25°C



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