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GAL22V10D-25LS 数据表(PDF) 10 Page - Lattice Semiconductor |
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GAL22V10D-25LS 数据表(HTML) 10 Page - Lattice Semiconductor |
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10 / 23 page ![]() Specifications GAL22V10 8 tpd A Input or I/O to Combinatorial Output 1 4 1 5 1 7.5 ns tco A Clock to Output Delay 1 3.5 1 4 1 4.5 ns tcf2 — Clock to Feedback Delay — 2.5 — 3 — 3 ns tsu — Setup Time, Input or Fdbk before Clk↑ 2.5 — 3 — 4.5 — ns th — Hold Time, Input or Fdbk after Clk↑ 0 — 0—0— ns A Maximum Clock Frequency with 167 — 142.8 — 111 — MHz External Feedback, 1/(tsu + tco) fmax3 A Maximum Clock Frequency with 200 — 166 — 133 — MHz Internal Feedback, 1/(tsu + tcf) A Maximum Clock Frequency with 250 — 200 — 166 — MHz No Feedback twh — Clock Pulse Duration, High 2 — 2.5 — 3 — ns twl — Clock Pulse Duration, Low 2 — 2.5 — 3 — ns ten B Input or I/O to Output Enabled 1 5 1 6 1 7.5 ns tdis C Input or I/O to Output Disabled 1 5 1 5.5 1 7.5 ns tar A Input or I/O to Asynch. Reset of Reg. 1 4.5 1 5.5 1 9 ns tarw — Asynch. Reset Pulse Duration 4.5 — 4.5 — 7 — ns tarr — Asynch. Reset to Clk↑ Recovery Time 3 — 4 — 5 — ns tspr — Synch. Preset to Clk↑ Recovery Time 3 — 4 — 5 — ns Over Recommended Operating Conditions UNITS 1) Refer to Switching Test Conditions section. 2) Calculated from fmax with internal feedback. Refer to fmax Description section. 3) Refer to fmax Description section. Characterized initially and after any design or process changes that may affect these parameters. PARAM TEST COND.1 DESCRIPTION SYMBOL PARAMETER MAXIMUM* UNITS TEST CONDITIONS C I Input Capacitance 8 pF V CC = 5.0V, VI = 2.0V C I/O I/O Capacitance 8 pF V CC = 5.0V, VI/O = 2.0V *Characterized but not 100% tested. -5 MIN. MAX. COM/IND COM -7 MIN. MAX. AC Switching Characteristics Capacitance (T A = 25 °C, f = 1.0 MHz) Specifications GAL22V10D COM -4 MIN. MAX. |
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