MTSF3203

3

Motorola TMOS Power MOSFET Transistor Device Data

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain–to–Source Breakdown Voltage

(Cpk

≥ 2.0)

(1) (3)

(VGS = 0 Vdc, ID = 250 µAdc)

Temperature Coefficient (Positive)

V(BR)DSS

20

—

—

TBD

—

—

Vdc

mV/

°C

Zero Gate Voltage Drain Current

(VDS = 20 Vdc, VGS = 0 Vdc)

(VDS = 20 Vdc, VGS = 0 Vdc, TJ = 125°C)

IDSS

—

—

—

—

1.0

25

µAdc

Gate–Body Leakage Current (VGS = ± 12 Vdc, VDS = 0)

IGSS

—

—

100

nAdc

ON CHARACTERISTICS(1)

Gate Threshold Voltage

(Cpk

≥ 2.0)

(3)

(VDS = VGS, ID = 250 µAdc)

Threshold Temperature Coefficient (Negative)

VGS(th)

1.0

—

TBD

TBD

—

—

Vdc

mV/

°C

Static Drain–to–Source On–Resistance

(Cpk

≥ 2.0)

(3)

(VGS = 4.5 Vdc, ID = 4.9 Adc)

(VGS = 2.5 Vdc, ID = 3.9 Adc)

RDS(on)

—

—

TBD

TBD

40

50

m

Ω

Forward Transconductance (VDS = 10 Vdc, ID = 4.9 Adc)

gFS

2.0

—

—

Mhos

DYNAMIC CHARACTERISTICS

Input Capacitance

(V

16 Vdc V

0 Vdc

Ciss

—

TBD

—

pF

Output Capacitance

(VDS = 16 Vdc, VGS = 0 Vdc,

f = 1.0 MHz)

Coss

—

TBD

—

Transfer Capacitance

f = 1.0 MHz)

Crss

—

TBD

—

SWITCHING CHARACTERISTICS(2)

Turn–On Delay Time

(V

10 Vd

I

4 9 Ad

td(on)

—

TBD

—

ns

Rise Time

(VDS = 10 Vdc, ID = 4.9 Adc,

tr

—

TBD

—

Turn–Off Delay Time

( DS

, D

,

VGS = 4.5 Vdc, RG = 6 Ω) (1)

td(off)

—

TBD

—

Fall Time

tf

—

TBD

—

Turn–On Delay Time

(V

10 Vd

I

3 9 Ad

td(on)

—

TBD

—

ns

Rise Time

(VDD = 10 Vdc, ID = 3.9 Adc,

tr

—

TBD

—

Turn–Off Delay Time

( DD

, D

,

VGS = 2.5 Vdc, RG = 6 Ω) (1)

td(off)

—

TBD

—

Fall Time

tf

—

TBD

—

Gate Charge

(V

10 Vd

I

4 9 Ad

QT

—

TBD

TBD

nC

(VDS = 10 Vdc, ID = 4.9 Adc,

Q1

—

TBD

—

( DS

, D

,

VGS = 4.5 Vdc)

Q2

—

TBD

—

Q3

—

TBD

—

SOURCE–DRAIN DIODE CHARACTERISTICS

Forward On–Voltage

(IS = 1.5 Adc, VGS = 0 Vdc) (1)

(IS = 1.5 Adc, VGS = 0 Vdc, TJ = 125°C)

VSD

—

—

TBD

TBD

1.0

—

Vdc

Reverse Recovery Time

(I

1 5 Adc V

0 Vdc

trr

—

TBD

—

ns

(IS = 1.5 Adc, VGS = 0 Vdc,

dIS/dt = 100 A/µs) (1)

ta

—

TBD

—

dIS/dt = 100 A/µs) (1)

tb

—

TBD

—

Reverse Recovery Storage Charge

QRR

—

TBD

—

µC

(1) Pulse Test: Pulse Width

≤ 300 µs, Duty Cycle ≤ 2%.

(2) Switching characteristics are independent of operating junction temperature.

(3) Reflects typical values.

Cpk =

Max limit – Typ

3 x SIGMA