TC53 datasheet(2/10 Pages) MICROCHIP

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TC53

DS21432C-page 2

 2002 Microchip Technology Inc.

1.0

ELECTRICAL

CHARACTERISTICS

Absolute Maximum Ratings*

Input Voltage ........................................................+12V

Output Current ....................................................50mA

Output Voltage ......................VIN + 0.3V to VSS – 0.3V

Power Dissipation

5-Pin SOT-23A ...........................................240mW

Operating Temperature Range.............-40°C to +85°C

Storage Temperature Range ..............-40°C to +125°C

*Stresses above those listed under "Absolute Maximum

Ratings" may cause permanent damage to the device. These

are stress ratings only and functional operation of the device

at these or any other conditions above those indicated in the

operation sections of the specifications is not implied.

Exposure to Absolute Maximum Rating conditions for

extended periods may affect device reliability.

TC53 ELECTRICAL SPECIFICATIONS

Electrical Characteristics: TA = 25°C, unless otherwise specified. Note 1, Note 2.

Symbol

Parameter

Min

Typ

Max

Units

Test Conditions

VDF

Detect Voltage

VT x 0.98

VT ±0.5%

VT x 1.02

Note 3

VHYS

Hysteresis Range

VDF x 0.02 VDF x 0.05 VDF x 0.08

ISS

Supply Current

—

0.9

1.0

1.3

1.6

2.0

2.6

3.0

3.4

3.8

4.2

µAVIN = 1.5V

VIN = 2.0V

VIN = 3.0V

VIN = 4.0V

VIN = 5.0V

VIN

Operating Voltage

1.5

—

10.0

VDF = 2.1 to 6.0V

IOUT

Output Current

—

2.2

7.7

10.1

11.5

13.0

—

N-ch; VDS = 0.5V, VIN = 1.0V

VIN = 2.0V

VIN = 3.0V

VIN = 4.0V

VIN = 5.0V

—

-10.0

—

P-ch; VDS = 2.1V, VIN = 8.0V

(CMOS Output)

∆VDF/

(

∆TOPR VDF)

Temperature Characteristics

—

±100

—

ppm/°C

tDLY

Delay Time

(VDR → VOUT Inversion)

——

0.2

msec

Note

An additional resistor between the VIN pin and the supply voltage may alter the electrical characteristics due to the increasing values of

VDR.

The power consumption during power-start to output being stable (release operation) is 2

µA greater than it is after that period

(completion of release operation) because of rush current in the delay circuit.

VT is the factory-programmed voltage detection threshold.

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