© 2002 Microchip Technology Inc.

DS21453B-page 3

TC652/TC653

1.0

ELECTRICAL

CHARACTERISTICS

Absolute Maximum Ratings*

Output Voltage (OUT to GND) ................................. 6V

Package Thermal Resistance (

Operating Temperature Range ......... -40°C to +125°C

Storage Temperature ......................... -65°C to +150°C

*Stresses above those listed under "Absolute Maximum Rat-

ings" may cause permanent damage to the device. These are

stress ratings only and functional operation of the device at

these or any other conditions above those indicated in the

operation sections of the specifications is not implied. Expo-

sure to Absolute Maximum Rating conditions for extended

periods may affect device reliability.

TC652/TC653 ELECTRICAL SPECIFICATIONS

Symbol

Parameter

Min

Typ.

Max

Units

Test Conditions

Supply Voltage

2.8

—

5.5

V

Supply Current

—

50

90

µAPWM, FAULT,T

open

SHDN Input

SHDN Input High Threshold

65

—

—

SHDN Input Low Threshold

—

—

15

PWM Output

PWM Output Low Voltage

—

—

0.3

V

PWM Output High Voltage

—

—

V

PWM Rise Time

—

10

—

µsec I

PWM to GND

PWM Fall Time

—

10

—

µsec I

PWM to GND

PWM Frequency

10

15

—

Hz

Start-up Time

—

—sec

or SHDN Released

Sense Input

—

70

—

mV

Sense Input Threshold

Voltage with Repect to

Ground

Temperature Accuracy

High Temperature Accuracy

°C

Note 1

-1.0

—

+1.0

-2.5

—

+2.5

Auto-shutdown Hysteresis

—

—

°CTC653 Only

FAULT Output

FAULT Output High Voltage

—

—

V

FAULT Output Low Voltage

—

—

0.4

V

tmp

Missing Pulse Detector

Time-out

——

Sec

—

—

V

—

—

0.4

V

Absolute Accuracy

—

—

°C

At Trip Point

Trip Point Hysteresis

—

5

—

°C

Note

1:

Transition from 90% to 100% Duty Cycle.