ABSOLUTEMAXIMUMRATINGS

(25°C unless otherwise specified)

Storage Temperature

-55°C to + 125°C

Operating Temperature

-30°C to + 100°C

Lead Soldering Temperature

(1/16 inch (1.6mm) from case for 10 secs) 260°C

INPUTDIODE

Forward Current

±50mA

Power Dissipation

70mW

OUTPUTTRANSISTOR

Collector-emitter Voltage BV

CEO

35V

Emitter-collector Voltage BV

ECO

6V

Collector Current

50mA

Power Dissipation

150mW

POWERDISSIPATION

Total Power Dissipation

200mW

(derate linearly 2.67mW/°C above 25°C)

DB91070

PARAMETER

MIN TYP MAX UNITS

TEST CONDITION

Input

Forward Voltage (V

1.2

1.4

V

I

Output

Collector-emitter Breakdown (BV

V

I

( Note 2 )

Emitter-collector Breakdown (BV

V

I

Collector-emitter Dark Current (I

100

nA

V

Coupled

Current Transfer Ratio (CTR) (Note 2)

ISP814, ISP824, ISP844

20

300

%

± 1mAI

ISP814A, ISP824A, ISP844A

50

150

%

Collector-emitter Saturation VoltageV

CE (SAT)

0.2

V

± 20mAI

Input to Output Isolation Voltage V

ISO

5300

V

RMS

See note 1

7500

V

PK

See note 1

Input-output Isolation Resistance R

ISO

Ω

V

Output Rise Time

tr

4

18

μsV

Output Fall Time

tf

3

18

μs

I

17/7/08

ELECTRICAL CHARACTERISTICS ( T

Note 1

Measured with input leads shorted together and output leads shorted together.

Note 2

Special Selections are available on request. Please consult the factory.