Am29F080B

37

P R E L I M I NARY

REVISION SUMMARY FOR AM29F080B

Revision B

Global

Formatted for consistency with other 5.0 volt-only data

sheets.

Figure 9, Read Operation Timings

Corrected RESET# waveform so that it is high for the

duration of the read cycle.

Figure 11, Chip/Sector Erase Operation Timings

Corrected data unlock cycle in diagram to 55h.

Figure 17, Alternate CE# Controlled Program

Operation Timings

Corrected command for sector erase to 30h, chip erase

to 10h.

Revision C

Standby Mode

Removed sentence in first paragraph referring to RE-

SET# pulse.

Sector Group Protection/Unprotection, Temporary

Sector Group Unprotect

Changed references from “sector” to “sector group”.

Corrected text to indicate sector groups are composed

of two adjacent sectors.

Revision C+1

Distinctive Characteristics

Changed minimum 100K write/erase cycles guaran-

teed to 1,000,000.

AC Characteristics

Erase/Program Operations; Erase and Program Oper-

ations Alternate CE# Controlled Writes: Corrected the

eters are 100% tested. Corrected the note reference for

Temporary Sector Unprotect Table

100% tested.

Command Definitions

Corrected the shift in the table header.

Erase and Programming Performance

Changed minimum 100K program and erase cycles

guaranteed to 1,000,000.

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Copyright © 1998 Advanced Micro Devices, Inc. All rights reserved.

AMD, the AMD logo, and combinations thereof are trademarks of Advanced Micro Devices, Inc.

ExpressFlash is a trademark of Advanced Micro Devices, Inc.

Product names used in this publication are for identification purposes only and may be trademarks of their respective companies.