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AM29SL800C 数据表(PDF) 36 Page - Advanced Micro Devices |
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AM29SL800C 数据表(HTML) 36 Page - Advanced Micro Devices |
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36 / 41 page ![]() 36 Am29SL800C PR EL I M I NAR Y AC CHARACTERISTICS Alternate CE# Controlled Erase/Program Operations Notes: 1. Not 100% tested. 2. See the “Erase and Programming Performance” section for more information. Parameter 100 120 150 JEDEC Std Description Unit tAVAV tWC Write Cycle Time (Note 1) Min 100 120 150 ns tAVEL tAS Address Setup Time Min 0 ns tELAX tAH Address Hold Time Min 50 60 70 ns tDVEH tDS Data Setup Time Min 50 60 70 ns tEHDX tDH Data Hold Time Min 0 ns tOES Output Enable Setup Time Min 0 ns tGHEL tGHEL Read Recovery Time Before Write (OE# High to WE# Low) Min 0 ns tWLEL tWS WE# Setup Time Min 0 ns tEHWH tWH WE# Hold Time Min 0 ns tELEH tCP CE# Pulse Width Min 50 60 70 ns tEHEL tCPH CE# Pulse Width High Min 30 ns tWHWH1 tWHWH1 Programming Operation (Notes 1, 2) Byte Typ 10 µs Word Typ 12 tWHWH2 tWHWH2 Sector Erase Operation (Notes 1, 2) Typ 2 sec |
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