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3STL2540 数据表(PDF) 3 Page - STMicroelectronics

部件名 3STL2540
功能描述  Low voltage high performance PNP power transistor
PDF  11 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

3STL2540 数据表(HTML) 3 Page - STMicroelectronics

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3STL2540
Electrical characteristics
Doc ID 022059 Rev 2
3/11
2
Electrical characteristics
TJ = 25 °C; unless otherwise specified.
Table 4.
Electrical characteristics
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
ICBO
Collector cut-off current
(IE = 0)
VCB = - 40 V
-100
nA
IEBO
Emitter cut-off current
(IC = 0)
VEB = - 6 V
-100
nA
VBE(on)
Base-emitter on voltage
VCE = - 2 V
IC = - 100 mA
-670
mV
VCE(sat)
(1)
1.
Pulse test: pulse duration
≤300 µs, duty cycle ≤2 %.
Collector-emitter saturation
voltage
IC = - 1 A
IB = - 10 mA
IC = - 2 A
IB = - 100 mA
IC = - 5 A
_ IB = - 250 mA
-150
-300
-200
mV
VBE(sat)
(1)
Base-emitter saturation
voltage
IC = - 1 A
_ IB = - 10 mA
800
mV
hFE
(1)
DC current gain
VCE = - 2 V IC = - 0.5 A
VCE = - 2 V IC = - 2 A
VCE = - 2 V IC = - 5 A
280
210
100
VCE = -0.2 ÷ - 2 V IC = - 1 A
Tj = -30 °C ÷ 150 °C
100
900
td
tr
ts
tf
Resistive load
Delay time
Rise time
Storage time
Fall time
IC = - 2 A
VCC = - 10 V
VBE(off) = 5 V,
- IB(on) = IB(off) = 200 mA
25
140
290
60
ns
ns
ns
ns
fT
Transition frequency
IC = - 0.1 A __ VCE = - 10 V
130MHz



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