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3STL2540 数据表(PDF) 3 Page - STMicroelectronics |
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3STL2540 数据表(HTML) 3 Page - STMicroelectronics |
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3 / 11 page ![]() 3STL2540 Electrical characteristics Doc ID 022059 Rev 2 3/11 2 Electrical characteristics TJ = 25 °C; unless otherwise specified. Table 4. Electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit ICBO Collector cut-off current (IE = 0) VCB = - 40 V -100 nA IEBO Emitter cut-off current (IC = 0) VEB = - 6 V -100 nA VBE(on) Base-emitter on voltage VCE = - 2 V IC = - 100 mA -670 mV VCE(sat) (1) 1. Pulse test: pulse duration ≤300 µs, duty cycle ≤2 %. Collector-emitter saturation voltage IC = - 1 A IB = - 10 mA IC = - 2 A IB = - 100 mA IC = - 5 A _ IB = - 250 mA -150 -300 -200 mV VBE(sat) (1) Base-emitter saturation voltage IC = - 1 A _ IB = - 10 mA 800 mV hFE (1) DC current gain VCE = - 2 V IC = - 0.5 A VCE = - 2 V IC = - 2 A VCE = - 2 V IC = - 5 A 280 210 100 VCE = -0.2 ÷ - 2 V IC = - 1 A Tj = -30 °C ÷ 150 °C 100 900 td tr ts tf Resistive load Delay time Rise time Storage time Fall time IC = - 2 A VCC = - 10 V VBE(off) = 5 V, - IB(on) = IB(off) = 200 mA 25 140 290 60 ns ns ns ns fT Transition frequency IC = - 0.1 A __ VCE = - 10 V 130MHz |
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