3STR1630 datasheet(3/10 Pages) STMICROELECTRONICS

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3STR1630

Electrical characteristics

Doc ID 16600 Rev 3

3/10

Electrical characteristics

Tcase = 25 °C unless otherwise specified.

Table 4.

Electrical characteristics

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

ICBO

Collector cut-off current

(IE = 0)

VCB = 30 V

0.1

µA

IEBO

Emitter cut-off current

(IC = 0)

VEB = 4 V

0.1

µA

V(BR)CBO

Collector-base

breakdown voltage

(IE = 0)

IC = 100 µA

V(BR)CEO

(1)

Pulse test: pulse duration

≤300 µs, duty cycle ≤2%

Collector-emitter

breakdown voltage

(IB = 0)

IC = 10 mA

V(BR)EBO

Emitter-base breakdown

voltage (IC = 0)

IE = 100 µA

VCE(sat)

(1)

Collector-emitter

saturation voltage

IC = 1 A

IB = 100 mA

IC = 2 A

IB = 40 mA

IC = 5 A

IB = 500 mA

140

240

190

300

VBE(sat)

(1)

Base-emitter saturation

voltage

IC = 2 A

IB = 40 mA

IC = 5 A

IB = 500 mA

830

1000

1100

hFE

(1)

DC current gain

IC = 50 mA

VCE = 2 V

IC = 0.5 A

VCE = 2 V

IC = 2 A

VCE = 2 V

IC = 5 A

VCE = 2 V

210

180

170

260

560

Transition frequency

IC = 0.1 A

VCE = 10 V

100

MHz

CCBO

Collector-base

capacitance (IE = 0)

VCB = 40 V,

f = 1 MHz

ton

toff

Resistive load

Turn-on time

Turn-off time

IC = 2.5 A

VCC = 12 V

IB1 = - IB2 = 125 mA

VBE(off) = - 5 V

450

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