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2SC5359-R 数据表(PDF) 2 Page - Toshiba Semiconductor |
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2SC5359-R 数据表(HTML) 2 Page - Toshiba Semiconductor |
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2 / 4 page ![]() 2SC5359 2006-11-10 2 Electrical Characteristics (Tc = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = 230 V, IE = 0 ― ― 5.0 μA Emitter cut-off current IEBO VEB = 5 V, IC = 0 ― ― 5.0 μA Collector-emitter breakdown voltage V (BR) CEO IC = 50 mA, IB = 0 230 ― ― V hFE (1) (Note) VCE = 5 V, IC = 1 A 55 ― 160 DC current gain hFE (2) VCE = 5 V, IC = 7 A 35 87 ― Collector-emitter saturation voltage VCE (sat) IC = 8 A, IB = 0.8 A ― 0.4 3.0 V Base-emitter voltage VBE VCE = 5 V, IC = 7 A ― 1.0 1.5 V Transition frequency fT VCE = 5 V, IC = 1 A ― 30 ― MHz Collector output capacitance Cob VCB = 10 V, IE = 0, f = 1 MHz ― 200 ― pF Note: hFE (1) classification R: 55 to 110, O: 80 to 160 Marking 2SC5359 TOSHIBA JAPAN Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. Part No. (or abbreviation code) |
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