STM32F207IE datasheet(85/177 Pages) STMICROELECTRONICS

85 / 177 page

STM32F20xxx

Electrical characteristics

Doc ID 15818 Rev 9

85/177

5.3.9

Internal clock source characteristics

The parameters given in Table 30 and Table 31 are derived from tests performed under

ambient temperature and VDD supply voltage conditions summarized in Table 12.

High-speed internal (HSI) RC oscillator

Figure 32.

ACCHSI versus temperature

Table 30.

HSI oscillator characteristics (1)

VDD = 3.3 V, TA = –40 to 105 °C unless otherwise specified.

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

fHSI

Frequency

MHz

ACCHSI

Accuracy of the HSI

oscillator

User-trimmed with the RCC_CR

Refer to application note AN2868 “STM32F10xxx internal RC oscillator (HSI) calibration” available from the

ST website www.st.com.

Factory-

calibrated

TA = –40 to 105 °C

–8

4.5

TA = –10 to 85 °C

–4

TA = 25 °C

–1

tsu(HSI)

(3)

Guaranteed by design, not tested in production.

HSI oscillator

startup time

-2.2

µs

IDD(HSI)

HSI oscillator

power consumption

-60

µA

MS19012V2

-8

-6

-4

-2

-45

-35

-25

-15

-5

105 115 125

Temperature (°C)

max

avg

min

STM32F207IE 数据表(PDF) 85 Page - STMicroelectronics

STM32F207IE 数据表(HTML) 85 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 73 74 75 76 77 78 79 80 81 82 83 84 85 86 87 88 89 90 91 92 93 94 95 96 97 98 99 100 ...More

数据表下载