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STL73D 数据表(PDF) 3 Page - STMicroelectronics |
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STL73D 数据表(HTML) 3 Page - STMicroelectronics |
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3 / 9 page ![]() STL73D Electrical characteristics Doc ID 15147 Rev 2 3/9 2 Electrical characteristics Tcase = 25 °C unless otherwise specified. Table 4. Electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit ICEV Collector cut-off current (VBE = - 1.5 V) VCE = 700 V VCE = 700 V TC = 125 °C 1 5 mA mA V(BR)EBO Emitter-base breakdown voltage (IC = 0) IE = 10 mA 9 18 V VCEO(sus) (1) 1. Pulse test: pulse duration ≤ 300 µs, duty cycle ≤ 2 % Collector-emitter sustaining voltage (IB = 0) IC = 10 mA 400 V VCE(sat) (1) Collector-emitter saturation voltage IC = 0.3 A IB = 60 mA IC = 0.6 A _ IB = 120 mA IC = 1 A _ _ IB = 250 mA 0.15 0.25 0.4 0.4 0.6 1 V V V VBE(sat) (1) Base-emitter saturation voltage IC = 0.6 A _ IB = 120 mA 0.95 1.1 V hFE DC current gain IC = 0.6 A VCE = 3 V IC = 1.2 A VCE = 5 V 10 4 21 10 tr ts tf Resistive load Rise time Storage time Fall time VCC = 125 V IC = 1 A IB(on) = - IB(off) = 200 mA TP = 25 µs 1 4 0.7 µs µs µs ts Inductive load Storage time IC = 0.3 A VClamp = 300 V IB(on) = - IB(off) = 60 mA L = 3 mH 0.3 µs VF Diode forward voltage IF = 0.5 A 1.5 V Table 5. hFE classification Symbol Parameter Group Value Min. Max. Unit hFE DC current gain VCE = 3 V, IC = 0.6 A L10 16 H15 21 |
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