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STL73D 数据表(PDF) 3 Page - STMicroelectronics

部件名 STL73D
功能描述  High voltage fast-switching NPN power transistor
PDF  9 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STL73D 数据表(HTML) 3 Page - STMicroelectronics

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STL73D
Electrical characteristics
Doc ID 15147 Rev 2
3/9
2
Electrical characteristics
Tcase = 25 °C unless otherwise specified.
Table 4.
Electrical characteristics
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
ICEV
Collector cut-off current
(VBE = - 1.5 V)
VCE = 700 V
VCE = 700 V
TC = 125 °C
1
5
mA
mA
V(BR)EBO
Emitter-base breakdown
voltage (IC = 0)
IE = 10 mA
9
18
V
VCEO(sus)
(1)
1.
Pulse test: pulse duration
≤ 300 µs, duty cycle ≤ 2 %
Collector-emitter
sustaining voltage
(IB = 0)
IC = 10 mA
400
V
VCE(sat)
(1)
Collector-emitter
saturation voltage
IC = 0.3 A
IB = 60 mA
IC = 0.6 A
_ IB = 120 mA
IC = 1 A _ _ IB = 250 mA
0.15
0.25
0.4
0.4
0.6
1
V
V
V
VBE(sat)
(1)
Base-emitter saturation
voltage
IC = 0.6 A
_ IB = 120 mA
0.95
1.1
V
hFE
DC current gain
IC = 0.6 A
VCE = 3 V
IC = 1.2 A
VCE = 5 V
10
4
21
10
tr
ts
tf
Resistive load
Rise time
Storage time
Fall time
VCC = 125 V
IC = 1 A
IB(on) = - IB(off) = 200 mA
TP = 25 µs
1
4
0.7
µs
µs
µs
ts
Inductive load
Storage time
IC = 0.3 A
VClamp = 300 V
IB(on) = - IB(off) = 60 mA
L = 3 mH
0.3
µs
VF
Diode forward voltage
IF = 0.5 A
1.5
V
Table 5.
hFE classification
Symbol
Parameter
Group
Value
Min.
Max.
Unit
hFE
DC current gain
VCE = 3 V, IC = 0.6 A
L10
16
H15
21



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