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LP61L1008 数据表(PDF) 2 Page - AMIC Technology |
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LP61L1008 数据表(HTML) 2 Page - AMIC Technology |
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2 / 13 page ![]() LP61L1008 Series 128K X 8 BIT 3.3V HIGH SPEED CENTER POWER CMOS SRAM (June, 2002, Version 2.0) 1 AMIC Technology, Inc. Features General Description n Single 3.3V ± 10% power supply n Access times: 12/15 ns (max.) n Current: Operating: 180mA (max.) Standby: 5mA (max.) n Full static operation, no clock or refreshing required n All inputs and outputs are directly TTL compatible n Center Power/Ground Pin Configuration n Common I/O using three-state output n Output enable and two chip enable inputs for easy application n Data retention voltage: 2.0V (min.) n Available in 32-pin SOJ 300 mil and 32-pin sTSOP packages The LP61L1008 is a high speed 1,048,576-bit static random access memory organized as 131,072 words by 8 bits and operates on a single 3.3V power supply. Inputs and three-state outputs are TTL compatible and allow for direct interfacing with common system bus structures. The chip enable input is provided for POWER-DOWN and device enable and an output enable input is included for easy interfacing. Data retention is guaranteed at a power supply voltage as low as 2.0V. Product Family Power Dissipation Product Family Operating Temperature VCC Range Speed Data Retention (ICCDR, Typ.) Standby (ISB1, Typ.) Operating (ICC2, Typ.) Package Type LP61L1008 0 °C~70°C 3.0V~3.6V 12/15 ns 10 µA 20 µA 66mA 32L SOJ 32L sTSOP 1. Typical values are measured at VCC = 3.0V, TA = 25 °C and not 100% tested. 2. Data retention current VCC = 2.0V. Pin Configuration n n SOJ n n sTSOP A0 A1 A2 A3 CE I/O1 I/O2 VCC GND I/O3 I/O4 WE A4 A5 A6 A8 A7 A9 A10 A11 A12 I/O5 I/O6 VCC I/O7 I/O8 OE A13 A14 A15 A16 GND 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 A15 VCC A16 A14 LP61L1008X 1 9 32 24 A0 A1 2 3 4 5 6 7 8 10 11 12 13 14 15 16 A2 A3 VCC VSS I/O3 A4 A5 A6 A7 31 30 29 28 27 26 25 23 22 21 20 19 18 17 A13 OE I/O7 I/O6 VSS A11 A10 A9 A8 I/O1 CE I/O0 I/O5 I/O4 A12 I/O2 WE |
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