EDF1AS datasheet(2/4 Pages) VISHAY

2 / 4 page

EDF1AS, EDF1BS, EDF1CS, EDF1DS

www.vishay.com

Vishay General Semiconductor

Revision: 19-Aug-13

Document Number: 88578

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Note

(1) PCB mounted with 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pad areas



RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)

Fig. 1 - Derating Curves Output Rectified Current

Fig. 2 - Maximum Non-Repetitive Peak Forward Surge

Current Per Diode

Fig. 3 - Typical Forward Characteristics Per Diode

Fig. 4 - Typical Reverse Leakage Characteristics Per Diode

THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)

PARAMETER

SYMBOL

EDF1AS

EDF1BS

EDF1CS

EDF1DS

UNIT

Typical thermal resistance (1)

RJA

°C/W

RJL

ORDERING INFORMATION (Example)

PREFERRED P/N

UNIT WEIGHT (g)

PREFERRED PACKAGE CODE

BASE QUANTITY

DELIVERY MODE

EDF1DS-E3/45

0.406

Tube

EDF1DS-E3/77

0.406

1500

13" diameter paper tape and reel

100

120

140

160

0.5

1.0

PK/IAV = π Resistive

or Inductive Load

0.75

0.25

0.51 x 0.51" (13 x 13 mm)

Copper Pads

Ambient Temperature (°C)

Capacitive

Loads

5.0

100

Number of Cycles at 60 Hz

J = 150 °C

Single Sine-Wave

1.0 Cycle

0.4

0.6

0.8

1.0

1.2

1.4

0.01

0.1

Instantaneous Forward Voltage (V)

J = 25 °C

Pulse Width = 300 µs

1 % Duty Cycle

100

0.1

100

1000

J = 125 °C

J = 25 °C

Percent of Rated Peak Reverse Voltage (%)

EDF1AS 数据表(PDF) 2 Page - Vishay Siliconix

EDF1AS 数据表(HTML) 2 Page - Vishay Siliconix

Html Pages

1 2 3 4

数据表下载