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STM32F373C8 数据表(PDF) 99 Page - STMicroelectronics

部件名 STM32F373C8
功能描述  ARM Cortex-M4 32b MCUFPU, up to 256KB Flash32KB SRAM
PDF  131 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STM32F373C8 数据表(HTML) 99 Page - STMicroelectronics

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DocID022691 Rev 4
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STM32F37xxx
Electrical characteristics
114
Equation 1: RSRC max formula
The formula above (Equation 1) is used to determine the maximum external signal source
impedance allowed for an error below 1/4 of LSB. Here N = 12 (from 12-bit resolution).
Table 61. RSRC max for fADC = 14 MHz(1)
1. Guaranteed by design, not tested in production.
Ts (cycles)
tS (µs)
RSRC max (kΩ)
1.5
0.11
0.4
7.5
0.54
5.9
13.5
0.96
11.4
28.5
2.04
25.2
41.5
2.96
37.2
55.5
3.96
50
71.5
5.11
50
239.5
17.1
50
Table 62. ADC accuracy(1)(2) (3)
1. ADC DC accuracy values are measured after internal calibration.
Symbol
Parameter
Test conditions
Typ
Max(4)
Unit
ET
Total unadjusted error
fADC = 14 MHz, RSRC < 10 kΩ,
VDDA = 3 V to 3.6 V
TA = 25 °C
±1.3
±3
LSB
EO
Offset error
±1
±2
EG
Gain error
±0.5
±1.5
ED
Differential linearity error
±0.7
±1
EL
Integral linearity error
±0.8
±1.5
ET
Total unadjusted error
fADC = 14 MHz, RSRC < 10 kΩ,
VDDA = 2.7 V to 3.6 V
TA = -40 to 105 °C
±3.3
±4
LSB
EO
Offset error
±1.9
±2.8
EG
Gain error
±2.8
±3
ED
Differential linearity error
±0.7
±1.3
EL
Integral linearity error
±1.2
±1.7
ET
Total unadjusted error
fADC = 14 MHz, RSRC < 10 kΩ,
VDDA = 2.4 V to 3.6 V
TA = 25 °C
±3.3
±4
LSB
EO
Offset error
±1.9
±2.8
EG
Gain error
±2.8
±3
ED
Differential linearity error
±0.7
±1.3
EL
Integral linearity error
±1.2
±1.7
RSRC
T
S
f
ADC
C
ADC
2
N2
+
()
ln
×
×
--------------------------------------------------------------
R
ADC
–
<



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