Characteristics

STPS20M100S

2/11

Doc ID 15521 Rev 2

1

Characteristics

To evaluate the conduction losses use the following equation:

2

(RMS)

Table 2.

Absolute ratings (limiting values with terminals 1 and 3 short circuited)

Symbol

Parameter

Value

Unit

Repetitive peak reverse voltage

100

V

Forward current rms

30

A

Average forward current

δ = 0.5

20

A

Surge non repetitive forward current

terminals 1 and 3 short circuited

530

A

(1)

Repetitive peak avalanche power

16000

W

(2)

Maximum repetitive peak avalanche

voltage

120

V

(2)

Maximum single pulse peak

avalanche voltage

120

V

Storage temperature range

-65 to + 175

°C

150

°C

1.

For temperature or pulse time duration deratings, refer to Figure 4. and Figure 5.. More details regarding the avalanche

energy measurements and diode validation in the avalanche are provided in the application notes AN1768 and AN2025.

2.

Refer to Figure 14

3.

condition to avoid thermal runaway for a diode on its own heatsink

dPtot

dTj

---------------

1

Rth j

a

–

()

--------------------------

<

Table 3.

Thermal resistance

Symbol

Parameter

Value

Unit

Junction to case

1.2

°C/W

TO-220FPAB

4

Table 4.

Static electrical characteristics (terminals 1 and 3 short circuited)

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

(1)

Reverse leakage current

5µA

5

mA

10

40

µA

10

40

mA

(2)

Forward voltage drop

550

mV

455

660

730

530

600

775

850

610

690

1.

2.