STTH4L06 datasheet(2/8 Pages) STMICROELECTRONICS

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Characteristics

STTH4L06

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Doc ID 16276 Rev 1

Characteristics

To evaluate the maximum conduction losses use the following equation:

P = 0.92 x IF(AV) + 0.045 x IF

(RMS)

Table 2.

Absolute ratings (limiting values at 25 °C unless otherwise specified)

Symbol

Parameter

Value

Unit

VRRM

Repetitive peak reverse voltage

600

IF(RMS)

Forward rms current

IF(AV)

Average forward current

IFSM

Surge non repetitive forward current

tp = 8.3 ms sinusoidal

Tstg

Storage temperature range

-65 to + 175

°C

Maximum operating junction temperature

175

°C

Table 3.

Thermal resistance

Symbol

Parameter

Maximum

Unit

Rth(j-l)

Junction to lead

Terminal length = 10 mm

DO-15

°C/W

DO-201AD

Rth(j-a)

Junction to ambient

DO-15

°C/W

DO-201AD

Table 4.

Static electrical characteristics

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

(1)

Pulse test: tp = 5 ms, δ < 2%

Reverse leakage current

Tj = 25 °C

VR = VRRM

µA

Tj= 150 °C

100

(2)

Pulse test: tp = 380 µs, δ < 2%

Forward voltage drop

Tj = 25 °C

IF = 3 A

1.30

Tj = 150 °C

0.85

1.05

Tj = 150 °C

IF = 4 A

0.90

1.10

Table 5.

Dynamic electrical characteristics

Symbol

Parameter

Test conditions

Min.

Typ

Max.

Unit

trr

Reverse recovery time

dIF/dt = -50 A/µs

IF = 1 A, VR = 30 V

-55

dIF/dt = -100 A/µs

IRM

Reverse recovery current

Tj = 25 °C

IF = 4 A, VR = 400 V,

dIF/dt = -100 A/µs

-3

Tj = 150 °C

6.5

tfr

Forward recovery time

IF = 4 A, dIF/dt = 100 A/µs,

VFR = 1.1 x VFmax

130

VFP

Forward recovery voltage

IF = 4 A, dIF/dt = 100 A/µs

7.5

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