TYN625RG datasheet(2/10 Pages) STMICROELECTRONICS

2 / 10 page

Characteristics

TN2540, TXN625, TYN625, TYN825, TYN1225

2/10

Doc ID 7478 Rev 8

Characteristics

Table 2.

Absolute ratings (limiting values)

Symbol

Parameter

Value

Unit

IT(RMS)

On-state rms current (180 °Conduction angle)

TO-220AB,

D2PAK

Tc = 100 °C

TO-220AB ins Tc = 83 °C

IT(AV)

Average on-state current (180 °Conduction angle)

Tc = 100 °C

ITSM

Non repetitive surge peak on-state current

tp = 8.3 ms

Tj = 25 °C

314

tp = 10 ms

300

I2tI2t Value for fusing

tp = 10 ms

Tj = 25 °C

450

A2S

dI/dt

Critical rate of rise of on-state current

IG = 2 x IGT, tr ≤ 100 ns

F = 60 Hz

Tj = 125 °C

A/µs

IGM

Peak gate current

tp = 20 µs

Tj = 125 °C

PG(AV)

Average gate power dissipation

Tj = 125 °C

Tstg

Storage junction temperature range

Operating junction temperature range

- 40 to + 150

- 40 to + 125

°C

VRGM

Maximum peak reverse gate voltage

Table 3.

Electrical Characteristics (Tj = 25 °C, unless otherwise specified)

Symbol

Test conditions

Value

Unit

IGT

VD = 12 V

RL = 33 Ω

MIN.

MAX.

VGT

MAX.

1.3

VGD

VD = VDRM RL = 3.3 kΩ

Tj = 125 °C

MIN.

0.2

IT = 500 mA Gate open

MAX.

IG = 1.2 x IGT

MAX.

dV/dt

VD = 67% VDRM Gate open

Tj = 125 °C

MIN.

1500

V/µs

VTM

ITM = 50 A tp = 380 µs

Tj = 25 °C

MAX.

1.6

Vt0

Threshold voltage

Tj = 125 °C

MAX.

0.77

Dynamic resistance

Tj = 125 °C

MAX.

IDRM

IRRM

VDRM = VRRM

Tj = 25 °C

MAX.

5µA

Tj = 125 °C

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