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数据搜索系统，热门电子元器件搜索 |
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数据搜索系统，热门电子元器件搜索 |
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IRFS7440PbF 数据表(PDF) 3 Page - International Rectifier |
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IRFS7440PbF 数据表(HTML) 3 Page - International Rectifier |
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3 / 11 page  IRFS/SL7440PbF www.irf.com 3 October 10, 2012 S D G Dynamic @ TJ = 25°C (unless otherwise specified) Symbol Parameter Min. Typ. Max. Units gfs Forward Transconductance 88 ––– ––– S Qg Total Gate Charge ––– 90 135 nC Qgs Gate-to-Source Charge ––– 23 ––– Qgd Gate-to-Drain ("Miller") Charge ––– 32 ––– Qsync Total Gate Charge Sync. (Qg - Qgd) ––– 58 ––– td(on) Turn-On Delay Time ––– 24 ––– ns tr Rise Time ––– 68 ––– td(off) Turn-Off Delay Time ––– 115 ––– tf Fall Time ––– 68 ––– Ciss Input Capacitance ––– 4730 ––– pF Coss Output Capacitance ––– 680 ––– Crss Reverse Transfer Capacitance ––– 460 ––– Coss eff. (ER) Effective Output Capacitance (Energy Related) ––– 845 ––– Coss eff. (TR) Effective Output Capacitance (Time Related) ––– 980 ––– Diode Characteristics Symbol Parameter Min. Typ. Max. Units IS Continuous Source Current ––– ––– 193 A (Body Diode) ISM Pulsed Source Current ––– ––– 772 A (Body Diode) Ãd VSD Diode Forward Voltage ––– 0.9 1.3 V dv/dt Peak Diode Recovery f ––– 6.8 ––– V/ns trr Reverse Recovery Time ––– 24 ––– ns TJ = 25°C VR = 34V, ––– 28 ––– TJ = 125°C IF = 100A Qrr Reverse Recovery Charge ––– 17 ––– nC TJ = 25°C di/dt = 100A/μs g ––– 20 ––– TJ = 125°C IRRM Reverse Recovery Current ––– 1.3 ––– A TJ = 25°C TJ = 175°C, IS = 100A, VDS = 40V ID = 30A RG = 2.7 VGS = 10V g VDD = 20V ID = 100A TJ = 25°C, IS = 100A, VGS = 0V g integral reverse p-n junction diode. MOSFET symbol showing the Conditions VGS = 10V g VGS = 0V VDS = 25V ƒ = 1.0 MHz ID = 100A, VDS =0V, VGS = 10V VGS = 0V, VDS = 0V to 32V i VGS = 0V, VDS = 0V to 32V h Conditions VDS = 10V, ID = 100A VDS =20V |
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