PDZ2.7B datasheet(3/9 Pages) PHILIPS

3 / 9 page

2004 Mar 22

NXP Semiconductors

Product data sheet

Voltage regulator diodes

PDZ-B series

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

Note

Device mounted on a printed-circuit board measuring 11

× 25 × 1.6 mm.

THERMAL CHARACTERISTICS

Note

Device mounted on a printed-circuit board measuring 11

× 25 × 1.6 mm.

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

continuous forward current

−

200

IZSM

non-repetitive peak reverse current

tp = 100 μs; square wave;

Tamb = 25 °C prior to surge

see Table 2

Ptot

total power dissipation

Tamb = 25 °C; note 1;

see Fig.2

−

400

Tstg

storage temperature

−65

+150

°C

junction temperature

−

150

°C

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Rth(j-s)

thermal resistance from junction to soldering point

130

K/W

Rth(j-a)

thermal resistance from junction to ambient

note 1

340

K/W

PDZ2.7B 数据表(PDF) 3 Page - NXP Semiconductors

PDZ2.7B 数据表(HTML) 3 Page - NXP Semiconductors

Html Pages

1 2 3 4 5 6 7 8 9

数据表下载