ASAT30 datasheet(1/1 Pages) ASI

部件名	ASAT30

功能描述	NPN SILICON RF POWER TRANSISTOR

PDF	1 Pages

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制造商	ASI [Advanced Semiconductor]

网页	http://www.advancedsemiconductor.com

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1 / 1 page

A D V A N C E D S E M I C O N D U C T O R, I N C.

REV. A

7525 ETHEL AVENUE

• NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004

1/1

Specifications are subject to change without notice.

CHARACTERISTICS T

C = 25

OC

SYMBOL

NONETEST CONDITIONS

MINIMUM TYPICAL MAXIMUM

UNITS

BVCEO

IC = 50 mA

35

V

BVCER

IC = 50 mA

RBE = 10

Ω

60

V

BVEBO

IE = 10 Ma

4.0

V

ICES

VE = 28 V

5

mA

hFE

VCE = 5.0 V

IC = 1.0 A

10

100

---

PGE

ηη

C

VCC = 28 V

POUT = 30 W

f = 1.65

GHz

9.0

50

dB

%

NPN SILICON RF POWER TRANSISTOR

ASAT30

DESCRIPTION:

The

ASI ASAT30 is Designed for

FEATURES:

•

• Omnigold™ Metalization System

MAXIMUM RATINGS

IC

10 A

VCB

60 V

VCE

35 V

PDISS

140 W @ TC = 25

OC

TJ

-65

OC to +200 OC

TSTG

-65

OC to +150 OC

θθ

JC

3.5

OC/W

PACKAGE STYLE .250 2L FLG(A)

ORDER CODE: ASI10521

MINIMUM

inches / mm

.055 / 1.40

.635 / 16.13

.124 / 3.15

.243 / 6.17

.739 / 18.77

B

C

D

E

F

G

A

MAXIMUM

.253 / 6.43

.749 / 19.02

.665 / 16.89

inches / mm

.065 / 1.65

H

.002 / 0.05

.006 / 0.15

DIM

K

L

I

J

.055 / 1.40

.075 / 1.91

.245 / 6.22

.065 / 1.65

.095 / 2.41

.255 / 6.48

.315 / 8.00

.325 / 8.26

.190 / 4.83

K

J

I

L

M

B

.050 x 45°

Ø .130 NOM.

H

G

F

E

C

D

.020 x 45°

A

.555 / 14.10

.565 / 14.35

M

.092 / 2.34

类似零件编号 - ASAT30

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