LM50, LM50-Q1

SNIS118E – JULY 1999 – REVISED SEPTEMBER 2013

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This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with

appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.

ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more

susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.

ABSOLUTE MAXIMUM RATINGS

(1)

Supply Voltage

+12V to

−0.2V

Output Voltage

Output Current

10 mA

Storage Temperature

−65°C to +150°C

150°C

Human Body Model

2000V

Machine Model (Does not apply for LM50-Q1)

250V

Charged Device Model

750V

(1)

Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. DC and AC electrical specifications do not

apply when operating the device beyond its rated operating conditions.

(2)

Human body model, 100 pF discharged through a 1.5 k

Ω resistor. Machine model, 200 pF discharged directly into each pin.

OPERATING RATINGS

(1)

Specified Temperature Range:

LM50C/LM50-Q1

−40°C to +125°C

LM50B

−25°C to +100°C

Operating Temperature Range

−40°C to +150°C

(2)

450°C/W

+4.5V to +10V

(1)

Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. DC and AC electrical specifications do not

apply when operating the device beyond its rated operating conditions.

(2)

Thermal resistance of the SOT-23 package is specified without a heat sink, junction to ambient.

(3)

Reflow temperature profiles are different for lead-free and non-lead-free packages.

ELECTRICAL CHARACTERISTICS

Parameter

Conditions

LM50B

LM50C/LM50-Q1

Units

(Limit)

Typical

Typical

±2.0

±3.0

°C (max)

±3.0

±4.0

°C (max)

+3.0,

−3.5

±4.0

°C (max)

±0.8

±0.8

°C (max)

Sensor Gain(Average Slope)

+9.7

+9.7

mV/°C (min)

+10.3

+10.3

mV/°C (max)

Output Resistance

2000

4000

2000

4000

Ω (max)

+4.5V

±0.8

±0.8

mV/V (max)

±1.2

±1.2

mV/V (max)

(1)

Limits are specified to TI's AOQL (Average Outgoing Quality Level).

(2)

Accuracy is defined as the error between the output voltage and 10mv/°C times the device's case temperature plus 500 mV, at specified

conditions of voltage, current, and temperature (expressed in °C).

(3)

Nonlinearity is defined as the deviation of the output-voltage-versus-temperature curve from the best-fit straight line, over the device's

rated temperature range.

(4)

Regulation is measured at constant junction temperature, using pulse testing with a low duty cycle. Changes in output due to heating

effects can be computed by multiplying the internal dissipation by the thermal resistance.

2

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