DD111

DD111M *

High Speed Drivers

A universal PIN diode driver w ith excellent noise

immunity, very f ast sw itching, 100 mA current

spikes and available test points f or increasing

quiescent output current.

1. W hen using inverting input, connect bias pin 5 to

non-inverting input pin 6.

2. W hen using non-inverting input, connect bias pin 5

to inverting input pin 4.

3. For -30 mA output current, connect pin 8 to pin 9.

4. For positive output currents other than 15 mA or

30 mA , an external resistor can be connected

bet w een pin 8 and +5V . See graph.

5. The negative output current varies w ith V ee and is

specif ied at -12V . W hen driving grounded anode

diodes, V ee should be kept at -5V w here the negative

current w ill be 5 mA . It may be increased by connecting

a resistor f rom TP- (pin 14) to V ee (pin 1). See f igure.

* M suf f ix denotes w elded metal package instead of standard epoxy sealed

ceramic package.

DD211

DD211B

DD211M *

Dual High Speed Drivers

A dual DD111 w ith current programming pins

omitted. This driver is of ten used in SPDT applications

by driving the inverting input of one channel and the

noninverting input of the other channel from the same

TTL input signal.

1. W hen using channel 1 inverting input pin 4, connect

bias pin 5 to non-inverting input pin 6.

2. W hen using channel 2 inverting input pin 11,.

connect bias pin 10 to non-inverting pin 9.

3. W hen using channel 1 non-inverting input pin 6,

connect bias pin 5 to inverting input pin 4.

4. W hen using channel 2 non-inverting input pin 9,

connect bias pin 10 to inverting input pin 11.

5. The tw o drivers are identical except f or quiescent

positive output current, w hich is nominally 15 mA

f or DD211 and 30 mA f or DD211B.

6 W hen driving anode-grounded diodes, care must

be exercised to avoid excessive pow er dissipation.

V ee should be limited to -10 V, at w hich point the

negative output current w ill be approximately

-10 mA . Consult f actory f or design assistance.

* M suf f ix denotes w elded metal package instead of standard epoxy-sealed

ceramic package.

V ee (– 5 to – 15)

Output

Ground

Inv Input

Input Bias

Non Input Inv

+5 V DC

0.035

Pkg

Bottom

.115

M A X

.015

.002

0'0 TY P 002 (M )

.005 +.001

.425

M A X

7

8

1

14

DD111

X X X X

TOP V IEW

0.050

TP–

+30mA

TP+

250 M IN

V ee (– 5 to – 15)

Output

Ground

Inv Input

Input Bias

Non Input Inv

+5 V DC

V ee (– 5 to – 15)

Output

Ground

Inv Input

Input Bias

Non Input Inv

+5 V DC +2

CHA NNEL 1

CHA NNEL 2

.425

SQ

M A X

DD111

X X X X

TOP V IEW

.230

M A X

.110

.035

.005 ± .001

TOP

BOTTOM

250 M IN

TY P

1

14

7

9

.015 ± .003

BOTTOM V IEW

0.050

1

14

7

9

.015

M A X

60

0

50

40

30

20

10

600

500

400

300

200

100

0

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