FMB075 datasheet(1/1 Pages) ASI

部件名	FMB075

功能描述	NPN SILICON RF POWER TRANSISTOR

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制造商	ASI [Advanced Semiconductor]

网页	http://www.advancedsemiconductor.com

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1 / 1 page

A D V A N C E D S E M I C O N D U C T O R, I N C.

REV. A

7525 ETHEL AVENUE

• NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004

1/1

Specifications are subject to change without notice.

CHARACTERISTICS T

C = 25

OC

SYMBOL

NONETEST CONDITIONS

MINIMUM TYPICAL MAXIMUM

UNITS

BVCEO

IC = 50 mA

35

V

BVCER

IC = 50 mA

RBE = 10

Ω

60

V

BVEBO

IE = 10 mA

4.0

V

ICES

VE = 28 V

5

mA

hFE

VCE = 5.0 V

IC = 1.0 A

10

100

---

Cob

VCB = 28 V

f = 1.0 MHz

75

pF

PG

ηη

C

VCC = 28 V

POUT = 75 W

f = 108 MHz

10

65

dB

%

NPN SILICON RF POWER TRANSISTOR

FMB075

DESCRIPTION:

The

ASI FMB075 is Designed for

FEATURES:

•

• Omnigold™ Metalization System

MAXIMUM RATINGS

IC

10 A

VCB

60 V

VCE

35 V

PDISS

140 W @ TC = 25

OC

TJ

-65

OC to +200 OC

TSTG

-65

OC to +150 OC

θθ

JC

1.5

OC/W

PACKAGE STYLE .500 4L FLG

ORDER CODE: ASI10587

MINIMUM

inches / mm

.220 / 5.59

.720 / 18.28

.125 / 3.18

.245 / 6.22

.970 / 24.64

B

C

D

E

F

G

A

MAXIMUM

.255 / 6.48

.980 / 24.89

.7.30 / 18.54

inches / mm

.230 / 5.84

H

.003 / 0.08

.007 / 0.18

DIM

K

L

I

J

.090 / 2.29

.150 / 3.81

.980 / 24.89

.110 / 2.79

.175 / 4.45

1.050 / 26.67

H

I

K

J

.112x45°

FULL R

C

E

B

G

D

F

A

L

Ø.125 NOM.

.125 / 3.18

.495 / 12.57

.505 / 12.83

.280 / 7.11

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