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AS5130 数据表(PDF) 7 Page - ams AG |
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AS5130 数据表(HTML) 7 Page - ams AG |
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7 / 42 page ![]() www.austriamicrosystems.com/AS5130 Revision 1.12 6 - 41 AS5130 Datasheet - Electrical Character i s t ics 6 Electrical Characteristics TAMB = -40ºC to +125ºC, unless otherwise noted. Table 3. Electrical Characteristics Symbol Parameter Conditions Min Typ Max Units VDD Positive Supply Voltage Except OTP programming 4.5 5 5.5 V DVDD Polling Mode Supply Voltage 3.6 5 5.5 V IDD Power Supply Current 14 24 mA Ioff Power Down Mode 1.4 2 mA N Resolution 8bit 1.406 deg TPwrUp Power Up Time Startup from zero 2000 µs Startup with preset AGC - Polling mode (Supplied during toff phase of VDD from the external buffer capacitor via DVDD pin) 250 Startup from low power mode 150 tda Propagation Delay Analog signal path; over full temperature range 15 17 µs tdd Tracking rate Step rate of tracking ADC; 1 step = 1.406º 0.85 1.15 1.45 µs tdelay Signal Processing Delay Total signal processing delay, Analog + Digital + SSI readout (tda + tdd + tSSI) 21.55 µs T Analog filter time constant Internal lowpass filter 4.1 6.6 12.5 µs INLcm Accuracy Centered Magnet -2 2 Within horizontal displacement radius (see parameters for magnet) -3 3 TN Transition Noise rms (1 sigma) 0.235 PORr Power-On-Reset levels VDD rising 3.7 4 4,3 V PORf VDD falling 3.4 3.7 3.9 V Parameters for Magnet n Rotational Speed Frequencies above 1000 rpm causes an additional not specified DNL Error -30000 30000 rpm MD Magnet diameter Diametrically magnetized 6 mm MT Magnet thickness 2.5 mm Bi Magnetic input range Valid for use of full range of sensitivity 32 75 mT s Magnetic Sensitivity of AGC AGC value available at SSI 0.5 5 LSB/mT BDC Magnetic Offset Magnetic stray field without gradient 4 mT DC/AC Characteristics for Digital Inputs and Outputs CMOS Input VIH High level Input voltage 0.7 x VDD V VIL Low level Input Voltage 0.3 x VDD V ILEAK Input Leakage Current 1µA CMOS Output |
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