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AS5510 数据表(PDF) 7 Page - ams AG |
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AS5510 数据表(HTML) 7 Page - ams AG |
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7 / 19 page ![]() www.ams.com/AS5510 Revision 0.1 6 - 18 AS5510 Datasheet - Electrical Character i s t ics 6.2 Electrical and Magnetic Specifications Table 6. Electrical and Magnetic Specifications Symbol Parameter Conditions Min Typ Max Units RES Resolution 10 bit Bin Magnetic Input Range Default Setting ±50 mT Configurable via I²C or factory trimming option ±25 mT ±12.5 mT ±18.75 mT Offsetinp Input related offset 1 1. Offsetinp = 0.35mT residual offset + 0.1mT earth magnetic field. 0.45 mT Linearity error 2 2. Linearity error= 3% tPwrUp Initial Power up time from cold start 3 3. This time is needed for the first power-up of the device until the offset compensation is finished; Includes readout of the PPROM fuses; It depends on the sensitivity setting. This time is needed for the first power-up of the device until the offset compensation is finished; Includes readout of the PPROM fuses 1.5 ms tPwrOn Power-on time 4 4. Time after switching from power-down mode into active mode until the offset compensation is finished. Time after switching from power- down mode into active mode until the offset compensation is finished 250 μs Fast Mode (default setting) fS ADC sampling frequency After offset compensation finished 50 KHz tdelay System propagation delay 20 μs Noiseinp Input related noise 5 5. Input related Noise (NoiseInp) is the repeatability of the measurement. Equivalent to 8 * rms 0.8 mTpp Slow mode (I²C command option) fS ADC sampling frequency After offset compensation finished 12.5 KHz tdelay System propagation delay 50 μs Noiseinp Input related noise 5 Equivalent to 8 * rms 0.5 mTpp lin error – 1 adc out maxB () – adc – out zeroB () – 2 adc out maxB 2 -------------- – adc – out zeroB () – × ------------------------------------------------------------------------------------------------------------- 100 × – = |
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