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AT27C080 数据表(PDF) 2 Page - ATMEL Corporation

部件名 AT27C080
功能描述  8-Megabit 1M x 8 UV Erasable CMOS EPROM
PDF  10 Pages
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制造商  ATMEL [ATMEL Corporation]
网页  http://www.atmel.com
标志 ATMEL - ATMEL Corporation

AT27C080 数据表(HTML) 2 Page - ATMEL Corporation

  AT27C080 Datasheet HTML 1Page - ATMEL Corporation AT27C080 Datasheet HTML 2Page - ATMEL Corporation AT27C080 Datasheet HTML 3Page - ATMEL Corporation AT27C080 Datasheet HTML 4Page - ATMEL Corporation AT27C080 Datasheet HTML 5Page - ATMEL Corporation AT27C080 Datasheet HTML 6Page - ATMEL Corporation AT27C080 Datasheet HTML 7Page - ATMEL Corporation AT27C080 Datasheet HTML 8Page - ATMEL Corporation AT27C080 Datasheet HTML 9Page - ATMEL Corporation Next Button
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AT27C080
2
The AT27C080 is available in a choice of packages, includ-
ing; one-time programmable (OTP) plastic PLCC, PDIP,
SOIC (SOP), and TSOP, as well as windowed ceramic
Cerdip. All devices feature two-line control (CE, OE) to give
designers the flexibility to prevent bus contention.
With h igh dens ity 1M byte s torage capabi lity, the
AT27C080 allows firmware to be stored reliably and to be
accessed by the system without the delays of mass storage
media.
Atmel’s 27C080 has additional features to ensure high
quality and efficient production use. The Rapid
Program-
ming Algorithm reduces the time required to program the
part and guarantees reliable programming. Programming
time is typically only 50
µs/byte. The Integrated Product
Identification Code electronically identifies the device and
manufacturer. This feature is used by industry standard
programming equipment to select the proper programming
algorithms and voltages.
Erasure Characteristics
The entire memory array of the AT27C080 is erased (all
outputs read as V
OH) after exposure to ultraviolet light at a
wavelength of 2,537Å. Complete erasure is assured after a
minimum of 20 minutes of exposure using 12,000
µW/cm2
intensity lamps spaced one inch away from the chip. Mini-
mum erase time for lamps at other intensity ratings can be
calculated from the minimum integrated erasure dose of 15
W.sec/cm
2. To prevent unintentional erasure, an opaque
label is recommended to cover the clear window on any UV
erasable EPROM that will be subjected to continuous
flourescent indoor lighting or sunlight.
System Considerations
Switching between active and standby conditions via the
Chip Enable pin may produce transient voltage excursions.
Unless accommodated by the system design, these tran-
sients may exceed data sheet limits, resulting in device
non-conformance. At a minimum, a 0.1
µF high frequency,
low inherent inductance, ceramic capacitor should be uti-
lized for each device. This capacitor should be connected
between the V
CC and Ground terminals of the device, as
close to the device as possible. Additionally, to stabilize the
supply voltage level on printed circuit boards with large
EPROM arrays, a 4.7
µF bulk electrolytic capacitor should
be utilized, again connected between the VCC and Ground
terminals. This capacitor should be positioned as close as
possible to the point where the power supply is connected
to the array.



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