BC337 datasheet(1/4 Pages) TSC

部件名	BC337

功能描述	NPN Transistor

PDF	4 Pages

Scroll/Zoom	100%

制造商	TSC [Taiwan Semiconductor Company, Ltd]

网页	http://www.taiwansemi.com

标志

1 / 4 page

◇For switching and AF amplifier applications

◇These types are subdivided into three groups -16, -25 and -40,

according to their DC current gain

◇Moisture sensitivity level 1

◇Driver transistor

◇Pb free version and RoHS compliant

◇Green compound (Halogen free) with suffix "G" on

packing code and prefix "G" on date code

◇Case : TO-92 small outline plastic package

per MIL-STD-202, Method 208 guaranteed

◇High temperature soldering guaranteed: 260℃/10s

◇Wright approx.: 190 mg

BC337-16/25/40

TO-92

4K / AMMO

Maximum Ratings and Electrical Characteristics

Rating at 25 ℃ ambient temperature unless otherwise specified.

Symbol

Units

VCBO

V

VCEO

V

VEBO

V

IC

mA

ICM

A

PTOT

mW

TJ

OC

TSTG

OC

Symbol

Units

at VCB=50V

at VCB=30V

V(BR)EBO

V

VCE(sat)

V

VBE(on)

V

Transition Frequency

fT

MHz

Output Capacitance

Cob

pF

Version：A13

Max.

Typ.

250

400

-

100

at IC=2mA

BC338

25

-

Collector Emitter Breakdown Voltage

-

DC Current Gain

hFE

250

-

BC337

-

12

0.7

1.2

-

Min.

V

630

60

-

Current Gain Group -16

-25

BC338

at IC=500mA, IB=50mA

at IE=100uA

5

100

-40

160

at VCE=5V, IC=10mA, f=50MHz

at VCB=10V, f=1MHz

Collector Emitter Voltage

Collector Emitter Saturation Voltage

Junction Temperature

Emitter Base Breakdown Voltage

at VCE= 1 V, IC=100mA

Package

150

Parameter

Mechanical Data

Collector Base Voltage

Packing

Packing code

A1

Note：Detail please see "Ordering Information(detail, example)" below.

TO-92

BC337

BC338

45

30

25

Packing code

(Green)

A1G

Manufacture code

B0

-

50

30

Collector Base Breakdown Voltage

Small Signal Product

NPN Transistor

Ordering Information (example)

Part No.

5

at VCE= 1 V, IC=300mA

50

-

Emitter Base Voltage

Collector Current

-

V(BR)CBO

-

at IC=100uA

-

Peak Collector Current

1

Total Power Dissipation

625

Base Emitter On Voltage

at VCE=1V, IC=300mA

-

800

BC337

BC338

Parameter

Storage Temperature Range

- 55 to + 150

Collector Base Cutoff Current

ICBO

100

V

--

-

V

BC337…BC338-16/25/40

Features

BC337

V(BR)CEO

45

-

Marking

BC337-16/25/40

nA

100

类似零件编号 - BC337

制造商	部件名	数据表	功能描述
Motorola, Inc	BC337	163Kb / 4P	Amplifier Transistor
NXP Semiconductors	BC337	47Kb / 8P	NPN general purpose transistor 1999 Apr 15
Semtech Corporation	BC337	343Kb / 5P	NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications???
Siemens Semiconductor G...	BC337	150Kb / 6P	NPN Silicon AF Transistors (High current gain High collector current Low collector-emitter saturation voltage)
Fairchild Semiconductor	BC337	27Kb / 3P	SWITCHING AND AMPLIFIER APPLICATIONS

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